Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Umang Singh
  • Hannah Genath
  • Ritam Sarkar
  • Jan Kruegener
  • H. Joerg Osten
  • Apurba Laha

External Research Organisations

  • Indian Institute of Technology Bombay (IITB)
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Details

Original languageEnglish
Title of host publicationIEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024
Subtitle of host publicationStrengthening the Globalization in Semiconductors
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (electronic)9798350371529
ISBN (print)979-8-3503-8308-9
Publication statusPublished - 2024
Event8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India
Duration: 3 Mar 20246 Mar 2024

Abstract

In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

Keywords

    Epitaxial Nd2O3, MOSHEMT, Reliability, thermal stability

ASJC Scopus subject areas

Cite this

Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. / Singh, Umang; Genath, Hannah; Sarkar, Ritam et al.
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 2024.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Singh, U, Genath, H, Sarkar, R, Kruegener, J, Osten, HJ & Laha, A 2024, Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. in IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, Bangalore, India, 3 Mar 2024. https://doi.org/10.1109/EDTM58488.2024.10511702
Singh, U., Genath, H., Sarkar, R., Kruegener, J., Osten, H. J., & Laha, A. (2024). Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. In IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM58488.2024.10511702
Singh U, Genath H, Sarkar R, Kruegener J, Osten HJ, Laha A. Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. In IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc. 2024 doi: 10.1109/EDTM58488.2024.10511702
Singh, Umang ; Genath, Hannah ; Sarkar, Ritam et al. / Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 2024.
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title = "Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT",
abstract = "In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.",
keywords = "Epitaxial Nd2O3, MOSHEMT, Reliability, thermal stability",
author = "Umang Singh and Hannah Genath and Ritam Sarkar and Jan Kruegener and Osten, {H. Joerg} and Apurba Laha",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
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AU - Singh, Umang

AU - Genath, Hannah

AU - Sarkar, Ritam

AU - Kruegener, Jan

AU - Osten, H. Joerg

AU - Laha, Apurba

N1 - Publisher Copyright: © 2024 IEEE.

PY - 2024

Y1 - 2024

N2 - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

AB - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

KW - Epitaxial Nd2O3

KW - MOSHEMT

KW - Reliability

KW - thermal stability

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DO - 10.1109/EDTM58488.2024.10511702

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BT - IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024

Y2 - 3 March 2024 through 6 March 2024

ER -

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