Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024 |
| Untertitel | Strengthening the Globalization in Semiconductors |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seitenumfang | 3 |
| ISBN (elektronisch) | 9798350371529 |
| ISBN (Print) | 979-8-3503-8308-9 |
| Publikationsstatus | Veröffentlicht - 2024 |
| Veranstaltung | 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, Indien Dauer: 3 März 2024 → 6 März 2024 |
Abstract
In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Physik und Astronomie (insg.)
- Instrumentierung
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- BibTex
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IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 2024.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT
AU - Singh, Umang
AU - Genath, Hannah
AU - Sarkar, Ritam
AU - Kruegener, Jan
AU - Osten, H. Joerg
AU - Laha, Apurba
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.
AB - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.
KW - Epitaxial Nd2O3
KW - MOSHEMT
KW - Reliability
KW - thermal stability
UR - http://www.scopus.com/inward/record.url?scp=85193263305&partnerID=8YFLogxK
U2 - 10.1109/EDTM58488.2024.10511702
DO - 10.1109/EDTM58488.2024.10511702
M3 - Conference contribution
AN - SCOPUS:85193263305
SN - 979-8-3503-8308-9
BT - IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Y2 - 3 March 2024 through 6 March 2024
ER -