Details
| Original language | English |
|---|---|
| Article number | 2200485 |
| Number of pages | 8 |
| Journal | physica status solidi (a) |
| Volume | 220 |
| Issue number | 16 |
| Early online date | 25 Sept 2022 |
| Publication status | Published - 18 Aug 2023 |
Abstract
The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light-emitting diodes (LEDs) emitting in the UV-C regime. Carbon impurities in the nitrogen sublattice (C N) of AlN are believed to be the origin of this absorption. A specially tailored experiment using a combination of ion implantation of boron, carbon, and neon with subsequent high-temperature annealing allows to separate the influence of intrinsic point defects and carbon impurities regarding this absorption. Herein, the presented results reveal the relevance of the intrinsic nitrogen-vacancy defect V N. This is in contradiction to the established explanation based on C N defects as the defect causing the 265 nm absorption and will be crucial for further UV-LED improvement. Finally, in this article, a new interpretation of the 265 nm absorption is introduced, which is corroborated by density functional theory (DFT) results from the past decade, which are reviewed and discussed based on the new findings.
Keywords
- absorption, AlN, carbon, high-temperature annealing, ion implantation, point defects, transmittance
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Materials Chemistry
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
- Physics and Astronomy(all)
- Surfaces and Interfaces
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In: physica status solidi (a), Vol. 220, No. 16, 2200485, 18.08.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A Combination of Ion Implantation and High-TemperatureAnnealing: The Origin of the 265 nm Absorption in AlN
AU - Peters, Lukas
AU - Margenfeld, Christoph
AU - Krügener, Jan
AU - Ronning, Carsten
AU - Waag, Andreas
N1 - Funding Information: L.P. and C.M. contributed equally to this work. This work was funded by Deutsche Forschungsgemeinschaft (DFG) in the framework of the SPP 2312 (Energieeffiziente Leistungselektronik “GaNius”), Project No. 462737320 (Aluminium Nitrid für die vertikale Leistungselektronik). The authors also thank Patrick Hoffmann for his technical assistance on the implantations.
PY - 2023/8/18
Y1 - 2023/8/18
N2 - The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light-emitting diodes (LEDs) emitting in the UV-C regime. Carbon impurities in the nitrogen sublattice (C N) of AlN are believed to be the origin of this absorption. A specially tailored experiment using a combination of ion implantation of boron, carbon, and neon with subsequent high-temperature annealing allows to separate the influence of intrinsic point defects and carbon impurities regarding this absorption. Herein, the presented results reveal the relevance of the intrinsic nitrogen-vacancy defect V N. This is in contradiction to the established explanation based on C N defects as the defect causing the 265 nm absorption and will be crucial for further UV-LED improvement. Finally, in this article, a new interpretation of the 265 nm absorption is introduced, which is corroborated by density functional theory (DFT) results from the past decade, which are reviewed and discussed based on the new findings.
AB - The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light-emitting diodes (LEDs) emitting in the UV-C regime. Carbon impurities in the nitrogen sublattice (C N) of AlN are believed to be the origin of this absorption. A specially tailored experiment using a combination of ion implantation of boron, carbon, and neon with subsequent high-temperature annealing allows to separate the influence of intrinsic point defects and carbon impurities regarding this absorption. Herein, the presented results reveal the relevance of the intrinsic nitrogen-vacancy defect V N. This is in contradiction to the established explanation based on C N defects as the defect causing the 265 nm absorption and will be crucial for further UV-LED improvement. Finally, in this article, a new interpretation of the 265 nm absorption is introduced, which is corroborated by density functional theory (DFT) results from the past decade, which are reviewed and discussed based on the new findings.
KW - absorption
KW - AlN
KW - carbon
KW - high-temperature annealing
KW - ion implantation
KW - point defects
KW - transmittance
UR - http://www.scopus.com/inward/record.url?scp=85141180817&partnerID=8YFLogxK
U2 - 10.1002/pssa.202200485
DO - 10.1002/pssa.202200485
M3 - Article
VL - 220
JO - physica status solidi (a)
JF - physica status solidi (a)
SN - 0031-8965
IS - 16
M1 - 2200485
ER -