Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2023 13th European Space Power Conference, ESPC 2023 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 979-8-3503-2899-8 |
| ISBN (Print) | 979-8-3503-2900-1 |
| Publikationsstatus | Veröffentlicht - 2023 |
| Veranstaltung | 13th European Space Power Conference, ESPC 2023 - Elche, Spanien Dauer: 2 Okt. 2023 → 6 Okt. 2023 |
Abstract
High-performance applications that require a high output current and a faster transient response increase the need to place the power supply as close as possible to the load. A Point-of-Load converter is specifically designed to meet this requirement. In space, additional reliability criteria such as extended temperature ranges and radiation tolerance are important. In this paper the Total Ionizing Dose and Destructive Single Event Effects on a prototype rad-hard Point-of-Load converter for space applications are evaluated. The device is a fully integrated DC-DC converter IC with two switches and the control on one die. The device is capable of 40 V input and 8 A continuous output current. The partially ESA-certified ATMEL ATMX150RHA silicon-on-insulator technology was used to make the IC immune to latch-ups. In addition, 'hardness-by-design' techniques were used. The radiation effects are analyzed and possible improvements in the design are given. Since not all transistors of the ATMX150RHA technology were previously tested against radiation, this paper gives more information on the radiation response of this technology.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Luft- und Raumfahrttechnik
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2023 13th European Space Power Conference, ESPC 2023. Institute of Electrical and Electronics Engineers Inc., 2023.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - TID and DSEE Effects in a Hi-Rel Point-of-Load IC Prototype for Space Applications
AU - Mand, Philipp
AU - Burkhay, Volodymyr
AU - Rocke, Andre
AU - Gieselmann, Uwe
AU - Fauth, Leon
AU - Olbrich, Markus
AU - Delepaut, Christophe
AU - Wicht, Bernhard
AU - Friebe, Jens
N1 - Publisher Copyright: © 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - High-performance applications that require a high output current and a faster transient response increase the need to place the power supply as close as possible to the load. A Point-of-Load converter is specifically designed to meet this requirement. In space, additional reliability criteria such as extended temperature ranges and radiation tolerance are important. In this paper the Total Ionizing Dose and Destructive Single Event Effects on a prototype rad-hard Point-of-Load converter for space applications are evaluated. The device is a fully integrated DC-DC converter IC with two switches and the control on one die. The device is capable of 40 V input and 8 A continuous output current. The partially ESA-certified ATMEL ATMX150RHA silicon-on-insulator technology was used to make the IC immune to latch-ups. In addition, 'hardness-by-design' techniques were used. The radiation effects are analyzed and possible improvements in the design are given. Since not all transistors of the ATMX150RHA technology were previously tested against radiation, this paper gives more information on the radiation response of this technology.
AB - High-performance applications that require a high output current and a faster transient response increase the need to place the power supply as close as possible to the load. A Point-of-Load converter is specifically designed to meet this requirement. In space, additional reliability criteria such as extended temperature ranges and radiation tolerance are important. In this paper the Total Ionizing Dose and Destructive Single Event Effects on a prototype rad-hard Point-of-Load converter for space applications are evaluated. The device is a fully integrated DC-DC converter IC with two switches and the control on one die. The device is capable of 40 V input and 8 A continuous output current. The partially ESA-certified ATMEL ATMX150RHA silicon-on-insulator technology was used to make the IC immune to latch-ups. In addition, 'hardness-by-design' techniques were used. The radiation effects are analyzed and possible improvements in the design are given. Since not all transistors of the ATMX150RHA technology were previously tested against radiation, this paper gives more information on the radiation response of this technology.
KW - DC-DC
KW - Hi-Rel
KW - IC
KW - Point-of-Load
KW - rad-hard
KW - radiation
KW - Single Event Effect (SEE)
KW - Space
KW - Total Ionizing Dose (TID)
UR - http://www.scopus.com/inward/record.url?scp=85185006818&partnerID=8YFLogxK
U2 - 10.1109/espc59009.2023.10413247
DO - 10.1109/espc59009.2023.10413247
M3 - Conference contribution
AN - SCOPUS:85185006818
SN - 979-8-3503-2900-1
BT - 2023 13th European Space Power Conference, ESPC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th European Space Power Conference, ESPC 2023
Y2 - 2 October 2023 through 6 October 2023
ER -