Details
| Original language | English |
|---|---|
| Article number | 012003 |
| Journal | Journal of Physics: Conference Series |
| Volume | 456 |
| Issue number | 1 |
| Publication status | Published - 5 Aug 2013 |
| Event | 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012 - Chamonix Mont Blanc, France Duration: 22 Jul 2012 → 27 Jul 2012 |
Abstract
In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of Physics: Conference Series, Vol. 456, No. 1, 012003, 05.08.2013.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry
AU - Bockhorn, L.
AU - Hodaei, A.
AU - Schuh, D.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2013/8/5
Y1 - 2013/8/5
N2 - In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.
AB - In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.
UR - http://www.scopus.com/inward/record.url?scp=84885076894&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/456/1/012003
DO - 10.1088/1742-6596/456/1/012003
M3 - Conference article
AN - SCOPUS:84885076894
VL - 456
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012003
T2 - 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012
Y2 - 22 July 2012 through 27 July 2012
ER -