Strain Effects in Bernal-Stacked Multi-Layer Graphene

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Lina Bockhorn
  • Jeffrey Appiah
  • Hannes Kakuschke
  • Lars Thole
  • Denis Ukolov
  • Peter Lemmens
  • Dirk Wulferding
  • Jana Hartmann
  • Andreas Waag
  • Rolf j. Haug

External Research Organisations

  • Technische Universität Braunschweig
  • Sejong University
View graph of relations

Details

Original languageEnglish
Pages (from-to)4443-4449
Number of pages7
JournalACS Applied Electronic Materials
Volume7
Issue number10
Early online date6 May 2025
Publication statusPublished - 27 May 2025

Abstract

Graphene is primarily known for its unique electrical and optical properties, emerging in monolayer and bilayer structures. Recently, Bernal stacked multilayer graphene flakes with more than three layers, attracting increasing interest. In contrast to monolayers, multilayer graphene exhibits a much more complex band structure driven by subtle interlayer interactions. These interactions can drive phenomena such as band gap openings and Lifshitz transitions. Here, we investigate the transport properties of a Bernal stacked 14-layer graphene flake, including the influence of strain. Our findings suggest that external strain can effectively tune multilayer graphene through Lifshitz transitions.

Keywords

    2D materials, graphene, Lifshitz transition, multi-layer, strain

ASJC Scopus subject areas

Cite this

Strain Effects in Bernal-Stacked Multi-Layer Graphene. / Bockhorn, Lina; Appiah, Jeffrey; Kakuschke, Hannes et al.
In: ACS Applied Electronic Materials, Vol. 7, No. 10, 27.05.2025, p. 4443-4449.

Research output: Contribution to journalArticleResearchpeer review

Bockhorn, L, Appiah, J, Kakuschke, H, Thole, L, Ukolov, D, Lemmens, P, Wulferding, D, Hartmann, J, Waag, A & Haug, RJ 2025, 'Strain Effects in Bernal-Stacked Multi-Layer Graphene', ACS Applied Electronic Materials, vol. 7, no. 10, pp. 4443-4449. https://doi.org/10.1021/acsaelm.5c00193
Bockhorn, L., Appiah, J., Kakuschke, H., Thole, L., Ukolov, D., Lemmens, P., Wulferding, D., Hartmann, J., Waag, A., & Haug, R. J. (2025). Strain Effects in Bernal-Stacked Multi-Layer Graphene. ACS Applied Electronic Materials, 7(10), 4443-4449. https://doi.org/10.1021/acsaelm.5c00193
Bockhorn L, Appiah J, Kakuschke H, Thole L, Ukolov D, Lemmens P et al. Strain Effects in Bernal-Stacked Multi-Layer Graphene. ACS Applied Electronic Materials. 2025 May 27;7(10):4443-4449. Epub 2025 May 6. doi: 10.1021/acsaelm.5c00193
Bockhorn, Lina ; Appiah, Jeffrey ; Kakuschke, Hannes et al. / Strain Effects in Bernal-Stacked Multi-Layer Graphene. In: ACS Applied Electronic Materials. 2025 ; Vol. 7, No. 10. pp. 4443-4449.
Download
@article{1fea577bccc346618f4e4a289ca3262a,
title = "Strain Effects in Bernal-Stacked Multi-Layer Graphene",
abstract = "Graphene is primarily known for its unique electrical and optical properties, emerging in monolayer and bilayer structures. Recently, Bernal stacked multilayer graphene flakes with more than three layers, attracting increasing interest. In contrast to monolayers, multilayer graphene exhibits a much more complex band structure driven by subtle interlayer interactions. These interactions can drive phenomena such as band gap openings and Lifshitz transitions. Here, we investigate the transport properties of a Bernal stacked 14-layer graphene flake, including the influence of strain. Our findings suggest that external strain can effectively tune multilayer graphene through Lifshitz transitions.",
keywords = "2D materials, graphene, Lifshitz transition, multi-layer, strain",
author = "Lina Bockhorn and Jeffrey Appiah and Hannes Kakuschke and Lars Thole and Denis Ukolov and Peter Lemmens and Dirk Wulferding and Jana Hartmann and Andreas Waag and Haug, {Rolf j.}",
note = "Publisher Copyright: {\textcopyright} 2025 The Authors. Published by American Chemical Society.",
year = "2025",
month = may,
day = "27",
doi = "10.1021/acsaelm.5c00193",
language = "English",
volume = "7",
pages = "4443--4449",
number = "10",

}

Download

TY - JOUR

T1 - Strain Effects in Bernal-Stacked Multi-Layer Graphene

AU - Bockhorn, Lina

AU - Appiah, Jeffrey

AU - Kakuschke, Hannes

AU - Thole, Lars

AU - Ukolov, Denis

AU - Lemmens, Peter

AU - Wulferding, Dirk

AU - Hartmann, Jana

AU - Waag, Andreas

AU - Haug, Rolf j.

N1 - Publisher Copyright: © 2025 The Authors. Published by American Chemical Society.

PY - 2025/5/27

Y1 - 2025/5/27

N2 - Graphene is primarily known for its unique electrical and optical properties, emerging in monolayer and bilayer structures. Recently, Bernal stacked multilayer graphene flakes with more than three layers, attracting increasing interest. In contrast to monolayers, multilayer graphene exhibits a much more complex band structure driven by subtle interlayer interactions. These interactions can drive phenomena such as band gap openings and Lifshitz transitions. Here, we investigate the transport properties of a Bernal stacked 14-layer graphene flake, including the influence of strain. Our findings suggest that external strain can effectively tune multilayer graphene through Lifshitz transitions.

AB - Graphene is primarily known for its unique electrical and optical properties, emerging in monolayer and bilayer structures. Recently, Bernal stacked multilayer graphene flakes with more than three layers, attracting increasing interest. In contrast to monolayers, multilayer graphene exhibits a much more complex band structure driven by subtle interlayer interactions. These interactions can drive phenomena such as band gap openings and Lifshitz transitions. Here, we investigate the transport properties of a Bernal stacked 14-layer graphene flake, including the influence of strain. Our findings suggest that external strain can effectively tune multilayer graphene through Lifshitz transitions.

KW - 2D materials

KW - graphene

KW - Lifshitz transition

KW - multi-layer

KW - strain

UR - http://www.scopus.com/inward/record.url?scp=105004768467&partnerID=8YFLogxK

U2 - 10.1021/acsaelm.5c00193

DO - 10.1021/acsaelm.5c00193

M3 - Article

VL - 7

SP - 4443

EP - 4449

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 10

ER -

By the same author(s)