Details
| Original language | English |
|---|---|
| Article number | 055218 |
| Journal | AIP Advances |
| Volume | 15 |
| Issue number | 5 |
| Publication status | Published - 12 May 2025 |
Abstract
Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental requirement for the interference of a large number of local emitters, enhancing their scalability. Here, we explore the strain tuning of GaAs/AlGaAs quantum dots emitting single photons close to the transitions of negatively charged Si-vacancy centers in diamonds, which are high-performance quantum memories with an efficient spin-photon interface. The emission wavelength is tuned by applying strain to quantum-dot-containing nanomembranes via micro-structured piezoelectric actuators, and wavelength resonance is achieved between two different quantum dots in the device. Changes in the binding energy of different trion complexes are observed, as well as the reduction of the neutral exciton fine structure. We envisage that such implementations facilitate the heterogeneous integration of quantum photonic devices, integrating both solid-state quantum light sources and memories by adapting their characteristics.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: AIP Advances, Vol. 15, No. 5, 055218, 12.05.2025.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strain-induced variation in quantum dot emissions close to Si-vacancy transitions
AU - An, Zhao
AU - Cao, Xin
AU - Steinbach, Maik
AU - Koch, Jürgen
AU - Jäschke, Peter
AU - Laurio, Christian
AU - Benthin, Frederik
AU - Zhang, Yiteng
AU - Ma, Chenxi
AU - Rugeramigabo, Eddy Patrick
AU - Haug, Rolf J.
AU - Yang, Jingzhong
AU - Zopf, Michael
N1 - Publisher Copyright: © 2025 Author(s).
PY - 2025/5/12
Y1 - 2025/5/12
N2 - Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental requirement for the interference of a large number of local emitters, enhancing their scalability. Here, we explore the strain tuning of GaAs/AlGaAs quantum dots emitting single photons close to the transitions of negatively charged Si-vacancy centers in diamonds, which are high-performance quantum memories with an efficient spin-photon interface. The emission wavelength is tuned by applying strain to quantum-dot-containing nanomembranes via micro-structured piezoelectric actuators, and wavelength resonance is achieved between two different quantum dots in the device. Changes in the binding energy of different trion complexes are observed, as well as the reduction of the neutral exciton fine structure. We envisage that such implementations facilitate the heterogeneous integration of quantum photonic devices, integrating both solid-state quantum light sources and memories by adapting their characteristics.
AB - Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental requirement for the interference of a large number of local emitters, enhancing their scalability. Here, we explore the strain tuning of GaAs/AlGaAs quantum dots emitting single photons close to the transitions of negatively charged Si-vacancy centers in diamonds, which are high-performance quantum memories with an efficient spin-photon interface. The emission wavelength is tuned by applying strain to quantum-dot-containing nanomembranes via micro-structured piezoelectric actuators, and wavelength resonance is achieved between two different quantum dots in the device. Changes in the binding energy of different trion complexes are observed, as well as the reduction of the neutral exciton fine structure. We envisage that such implementations facilitate the heterogeneous integration of quantum photonic devices, integrating both solid-state quantum light sources and memories by adapting their characteristics.
UR - http://www.scopus.com/inward/record.url?scp=105005275409&partnerID=8YFLogxK
U2 - 10.1063/5.0267909
DO - 10.1063/5.0267909
M3 - Article
AN - SCOPUS:105005275409
VL - 15
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 5
M1 - 055218
ER -