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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

1 - 10 out of 10Page size: 20

Publications

  1. 2022

  2. Published

    Nonevaporable getter-MEMS for generating UHV conditions in small volumina

    Diekmann, L. F., Kassner, A., Dencker, F. & Wurz, M. C., Sept 2022, In: Journal of Vacuum Science and Technology B. 40, 5, 054202.

    Research output: Contribution to journalArticleResearchpeer review

  3. 2009

  4. Published

    Complementary metal oxide semiconductor integration of epitaxial Gd2 O3

    Lemme, M. C., Gottlob, H. D. B., Echtermeyer, T. J., Schmidt, M., Kurz, H., Endres, R., Schwalke, U., Czernohorkky, M., Tetzlaff, D. & Osten, H. J., 9 Feb 2009, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 1, p. 258-261 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  5. 2007

  6. Published

    Integration of functional epitaxial oxides into silicon: From high- K application to nanostructures

    Osten, H. J., Kühne, D., Laha, A., Czernohorsky, M., Bugiel, E. & Fissel, A., 31 May 2007, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 3, p. 1039-1043 5 p.

    Research output: Contribution to journalArticleResearchpeer review

  7. 2006

  8. Published

    Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

    Fissel, A., Czernohorsky, M. & Osten, H. J., 26 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2115-2118 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  9. Published

    Fabrication of single-crystalline insulator/Si/insulator nanostructures

    Fissel, A., Kühne, D., Bugiel, E. & Osten, H. J., 25 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2041-2046 6 p.

    Research output: Contribution to journalArticleResearchpeer review

  10. 2003

  11. Published

    Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

    Fissel, A., Osten, H. J. & Bugiel, E., 5 Aug 2003, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1765-1772 8 p.

    Research output: Contribution to journalArticleResearchpeer review

  12. 2000

  13. External

    In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy

    Wittmaack, K., Griesche, J., Osten, H. J. & Patel, S. B., 1 Jan 2000, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 1, p. 524-258 267 p.

    Research output: Contribution to journalArticleResearchpeer review

  14. 1998

  15. External

    Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices

    Osten, H. J., Heinemann, B., Knoll, D., Lippert, G. & Rücker, H., 1 May 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1750-1753 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  16. External

    Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)

    Pressel, K., Franz, M., Krüger, D., Osten, H. J., Garrido, B. & Morante, J. R., May 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1757-1761 5 p.

    Research output: Contribution to journalArticleResearchpeer review

  17. 1990

  18. External

    Fabrication of coupled quantum dot arrays with a 100–150 nm period

    Lee, K. Y., Kern, D. P., Ismail, K., Haug, R., Smith, T. P., Masselink, W. T. & Hong, J. M., Nov 1990, In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 8, 6, 1366-1370.

    Research output: Contribution to journalArticleResearch