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Publications
2022
- Published
Nonevaporable getter-MEMS for generating UHV conditions in small volumina
Diekmann, L. F., Kassner, A., Dencker, F. & Wurz, M. C., Sept 2022, In: Journal of Vacuum Science and Technology B. 40, 5, 054202.Research output: Contribution to journal › Article › Research › peer review
2009
- Published
Complementary metal oxide semiconductor integration of epitaxial Gd2 O3
Lemme, M. C., Gottlob, H. D. B., Echtermeyer, T. J., Schmidt, M., Kurz, H., Endres, R., Schwalke, U., Czernohorkky, M., Tetzlaff, D. & Osten, H. J., 9 Feb 2009, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 1, p. 258-261 4 p.Research output: Contribution to journal › Article › Research › peer review
2007
- Published
Integration of functional epitaxial oxides into silicon: From high- K application to nanostructures
Osten, H. J., Kühne, D., Laha, A., Czernohorsky, M., Bugiel, E. & Fissel, A., 31 May 2007, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 3, p. 1039-1043 5 p.Research output: Contribution to journal › Article › Research › peer review
2006
- Published
Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide
Fissel, A., Czernohorsky, M. & Osten, H. J., 26 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2115-2118 4 p.Research output: Contribution to journal › Article › Research › peer review
- Published
Fabrication of single-crystalline insulator/Si/insulator nanostructures
Fissel, A., Kühne, D., Bugiel, E. & Osten, H. J., 25 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2041-2046 6 p.Research output: Contribution to journal › Article › Research › peer review
2003
- Published
Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
Fissel, A., Osten, H. J. & Bugiel, E., 5 Aug 2003, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1765-1772 8 p.Research output: Contribution to journal › Article › Research › peer review
2000
- External
In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy
Wittmaack, K., Griesche, J., Osten, H. J. & Patel, S. B., 1 Jan 2000, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 1, p. 524-258 267 p.Research output: Contribution to journal › Article › Research › peer review
1998
- External
Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices
Osten, H. J., Heinemann, B., Knoll, D., Lippert, G. & Rücker, H., 1 May 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1750-1753 4 p.Research output: Contribution to journal › Article › Research › peer review
- External
Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)
Pressel, K., Franz, M., Krüger, D., Osten, H. J., Garrido, B. & Morante, J. R., May 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1757-1761 5 p.Research output: Contribution to journal › Article › Research › peer review
1990
- External
Fabrication of coupled quantum dot arrays with a 100–150 nm period
Lee, K. Y., Kern, D. P., Ismail, K., Haug, R., Smith, T. P., Masselink, W. T. & Hong, J. M., Nov 1990, In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 8, 6, 1366-1370.Research output: Contribution to journal › Article › Research