Single-electron tunneling through semiconducting nanostructures

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  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)1283-1292
Seitenumfang10
FachzeitschriftElectrochimica acta
Jahrgang40
Ausgabenummer10
PublikationsstatusVeröffentlicht - Juli 1995
Extern publiziertJa

Abstract

Tunneling through semiconducting nanostructures is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in linear and nonlinear transport and for single and multiple structures. Several realizations and applications are discussed.

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Single-electron tunneling through semiconducting nanostructures. / Haug, Rolf J.
in: Electrochimica acta, Jahrgang 40, Nr. 10, 07.1995, S. 1283-1292.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Haug RJ. Single-electron tunneling through semiconducting nanostructures. Electrochimica acta. 1995 Jul;40(10):1283-1292. doi: 10.1016/0013-4686(95)00059-N
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note = "Funding information: Acknowledgemm-I gratefully acknowledge the hospitality and the discussions with numerous people, especially K. Lee, T. P. Smith III, D. Kern, J. M. Hong, L. L. Chang and L. Esaki at IBM, Yorktown Heights, where I started the experiments discussed here. Contributions of J. Weis, H. Pothier and R. Blick from the Max-Planck-lnstitut are also gratefully acknowledged. I thank K. Ploog and K. Eberl for providing MBE grown samples for some of the experiments. Discussions with D. Pfannkuche, W. Hausler, D. Weinmann and others have been also invaluable. I thank K. v. Klitzing for the support, encouragement and interest into this work. Part of this work has been supported by the Bundesministerium fiir Forschung und Technologie.",
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AU - Haug, Rolf J.

N1 - Funding information: Acknowledgemm-I gratefully acknowledge the hospitality and the discussions with numerous people, especially K. Lee, T. P. Smith III, D. Kern, J. M. Hong, L. L. Chang and L. Esaki at IBM, Yorktown Heights, where I started the experiments discussed here. Contributions of J. Weis, H. Pothier and R. Blick from the Max-Planck-lnstitut are also gratefully acknowledged. I thank K. Ploog and K. Eberl for providing MBE grown samples for some of the experiments. Discussions with D. Pfannkuche, W. Hausler, D. Weinmann and others have been also invaluable. I thank K. v. Klitzing for the support, encouragement and interest into this work. Part of this work has been supported by the Bundesministerium fiir Forschung und Technologie.

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