Details
| Original language | English |
|---|---|
| Pages (from-to) | 1283-1292 |
| Number of pages | 10 |
| Journal | Electrochimica acta |
| Volume | 40 |
| Issue number | 10 |
| Publication status | Published - Jul 1995 |
| Externally published | Yes |
Abstract
Tunneling through semiconducting nanostructures is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in linear and nonlinear transport and for single and multiple structures. Several realizations and applications are discussed.
Keywords
- charging effects, semiconductors, transport experiments
ASJC Scopus subject areas
- Chemical Engineering(all)
- General Chemical Engineering
- Chemistry(all)
- Electrochemistry
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In: Electrochimica acta, Vol. 40, No. 10, 07.1995, p. 1283-1292.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron tunneling through semiconducting nanostructures
AU - Haug, Rolf J.
N1 - Funding information: Acknowledgemm-I gratefully acknowledge the hospitality and the discussions with numerous people, especially K. Lee, T. P. Smith III, D. Kern, J. M. Hong, L. L. Chang and L. Esaki at IBM, Yorktown Heights, where I started the experiments discussed here. Contributions of J. Weis, H. Pothier and R. Blick from the Max-Planck-lnstitut are also gratefully acknowledged. I thank K. Ploog and K. Eberl for providing MBE grown samples for some of the experiments. Discussions with D. Pfannkuche, W. Hausler, D. Weinmann and others have been also invaluable. I thank K. v. Klitzing for the support, encouragement and interest into this work. Part of this work has been supported by the Bundesministerium fiir Forschung und Technologie.
PY - 1995/7
Y1 - 1995/7
N2 - Tunneling through semiconducting nanostructures is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in linear and nonlinear transport and for single and multiple structures. Several realizations and applications are discussed.
AB - Tunneling through semiconducting nanostructures is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in linear and nonlinear transport and for single and multiple structures. Several realizations and applications are discussed.
KW - charging effects
KW - semiconductors
KW - transport experiments
UR - http://www.scopus.com/inward/record.url?scp=0029345331&partnerID=8YFLogxK
U2 - 10.1016/0013-4686(95)00059-N
DO - 10.1016/0013-4686(95)00059-N
M3 - Article
AN - SCOPUS:0029345331
VL - 40
SP - 1283
EP - 1292
JO - Electrochimica acta
JF - Electrochimica acta
SN - 0013-4686
IS - 10
ER -