Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)

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  • Leibniz-Institut für innovative Mikroelektronik (IHP)
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OriginalspracheEnglisch
Aufsatznummer115302
Seitenumfang13
FachzeitschriftJournal of applied physics
Jahrgang135
Ausgabenummer11
Frühes Online-Datum19 März 2024
PublikationsstatusVeröffentlicht - 21 März 2024

Abstract

This study explores the growth and structural characteristics of N d 2 O 3 layers on virtual germanium-rich SiGe substrates on Si(111). We focus on the emergence of the hexagonal phase depending on the stoichiometry of the virtual substrate. X-ray diffraction measurements reveal a hexagonal phase when N d 2 O 3 is grown directly on Si(111), while growth on Ge leads to a cubic oxide structure. On SiGe layers, the growth of the oxide results in a mixed phase containing hexagonal and cubic regions, regardless of the Ge content. The cubic structure grown on virtual Ge substrates exhibits strong tensile strain, while layers grown on SiGe layers show no strain. In situ growth control via electron diffraction shows a dependence of the oxide structure of the surface reconstruction of the virtual substrate. Growth on a 7 × 7 reconstruction leads to hexagonal parts on Si-based substrates, while growth on c ( 2 × 8 ) results in cubic oxide growth on Ge. Furthermore, oxide layers grown on virtual SiGe substrates form an interfacial silicate layer. The thickness of the interfacial layer is influenced by the Si content and the structure of the oxide layer enabling oxygen diffusion pathways.

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Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111). / Genath, H.; Schubert, M. A.; Yamtomo, H. L. et al.
in: Journal of applied physics, Jahrgang 135, Nr. 11, 115302, 21.03.2024.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Genath, H., Schubert, M. A., Yamtomo, H. L., Krügener, J., & Osten, H. J. (2024). Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111). Journal of applied physics, 135(11), Artikel 115302. https://doi.org/10.1063/5.0191350
Genath H, Schubert MA, Yamtomo HL, Krügener J, Osten HJ. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111). Journal of applied physics. 2024 Mär 21;135(11):115302. Epub 2024 Mär 19. doi: 10.1063/5.0191350
Genath, H. ; Schubert, M. A. ; Yamtomo, H. L. et al. / Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111). in: Journal of applied physics. 2024 ; Jahrgang 135, Nr. 11.
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AU - Genath, H.

AU - Schubert, M. A.

AU - Yamtomo, H. L.

AU - Krügener, J.

AU - Osten, H. J.

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