Details
Originalsprache | Englisch |
---|---|
Fachzeitschrift | Advanced engineering materials |
Frühes Online-Datum | 29 Aug. 2024 |
Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 29 Aug. 2024 |
Abstract
Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Advanced engineering materials, 29.08.2024.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells
AU - Katkus, Tomas
AU - Ng, Soon Hock
AU - Mu, Haoran
AU - Le, Nguyen Hoai An
AU - Stonytė, Dominyka
AU - Khajehsaeidimahabadi, Zahra
AU - Seniutinas, Gediminas
AU - Baltrukonis, Justas
AU - Ulčinas, Orestas
AU - Mikutis, Mindaugas
AU - Sabonis, Vytautas
AU - Nishijima, Yoshiaki
AU - Rienäcker, Michael
AU - Römer, Udo
AU - Krügener, Jan
AU - Peibst, Robby
AU - John, Sajeev
AU - Juodkazis, Saulius
N1 - Publisher Copyright: © 2024 The Author(s). Advanced Engineering Materials published by Wiley-VCH GmbH.
PY - 2024/8/29
Y1 - 2024/8/29
N2 - Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.
AB - Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.
KW - Bessel beams
KW - high-efficiency solar-to-electrical energy conversions
KW - Lambertian limits
KW - Si solar cells
UR - http://www.scopus.com/inward/record.url?scp=85202599620&partnerID=8YFLogxK
U2 - 10.48550/arXiv.2403.14237
DO - 10.48550/arXiv.2403.14237
M3 - Article
AN - SCOPUS:85202599620
JO - Advanced engineering materials
JF - Advanced engineering materials
SN - 1438-1656
ER -