Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Tomas Katkus
  • Soon Hock Ng
  • Haoran Mu
  • Nguyen Hoai An Le
  • Dominyka Stonytė
  • Zahra Khajehsaeidimahabadi
  • Gediminas Seniutinas
  • Justas Baltrukonis
  • Orestas Ulčinas
  • Mindaugas Mikutis
  • Vytautas Sabonis
  • Yoshiaki Nishijima
  • Michael Rienäcker
  • Udo Römer
  • Jan Krügener
  • Robby Peibst
  • Sajeev John
  • Saulius Juodkazis

Externe Organisationen

  • Swinburne University of Technology
  • Vilnius University
  • Altechna R&D
  • Yokohama National University
  • Institut für Solarenergieforschung GmbH (ISFH)
  • University of Toronto
  • Tokyo Institute of Technology
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Details

OriginalspracheEnglisch
FachzeitschriftAdvanced engineering materials
Frühes Online-Datum29 Aug. 2024
PublikationsstatusElektronisch veröffentlicht (E-Pub) - 29 Aug. 2024

Abstract

Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.

ASJC Scopus Sachgebiete

Zitieren

Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells. / Katkus, Tomas; Ng, Soon Hock; Mu, Haoran et al.
in: Advanced engineering materials, 29.08.2024.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Katkus, T, Ng, SH, Mu, H, Le, NHA, Stonytė, D, Khajehsaeidimahabadi, Z, Seniutinas, G, Baltrukonis, J, Ulčinas, O, Mikutis, M, Sabonis, V, Nishijima, Y, Rienäcker, M, Römer, U, Krügener, J, Peibst, R, John, S & Juodkazis, S 2024, 'Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells', Advanced engineering materials. https://doi.org/10.48550/arXiv.2403.14237, https://doi.org/10.1002/adem.202400711
Katkus, T., Ng, S. H., Mu, H., Le, N. H. A., Stonytė, D., Khajehsaeidimahabadi, Z., Seniutinas, G., Baltrukonis, J., Ulčinas, O., Mikutis, M., Sabonis, V., Nishijima, Y., Rienäcker, M., Römer, U., Krügener, J., Peibst, R., John, S., & Juodkazis, S. (2024). Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells. Advanced engineering materials. Vorabveröffentlichung online. https://doi.org/10.48550/arXiv.2403.14237, https://doi.org/10.1002/adem.202400711
Katkus T, Ng SH, Mu H, Le NHA, Stonytė D, Khajehsaeidimahabadi Z et al. Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells. Advanced engineering materials. 2024 Aug 29. Epub 2024 Aug 29. doi: 10.48550/arXiv.2403.14237, 10.1002/adem.202400711
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title = "Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells",
abstract = "Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.",
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T1 - Bessel-Beam Direct Write of the Etch Mask in a Nano-Film of Alumina for High-Efficiency Si Solar Cells

AU - Katkus, Tomas

AU - Ng, Soon Hock

AU - Mu, Haoran

AU - Le, Nguyen Hoai An

AU - Stonytė, Dominyka

AU - Khajehsaeidimahabadi, Zahra

AU - Seniutinas, Gediminas

AU - Baltrukonis, Justas

AU - Ulčinas, Orestas

AU - Mikutis, Mindaugas

AU - Sabonis, Vytautas

AU - Nishijima, Yoshiaki

AU - Rienäcker, Michael

AU - Römer, Udo

AU - Krügener, Jan

AU - Peibst, Robby

AU - John, Sajeev

AU - Juodkazis, Saulius

N1 - Publisher Copyright: © 2024 The Author(s). Advanced Engineering Materials published by Wiley-VCH GmbH.

PY - 2024/8/29

Y1 - 2024/8/29

N2 - Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.

AB - Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over (Formula presented.) areas (before up scaling to (Formula presented.)) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high-resolution sub-1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina (Formula presented.) –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero-mesa formation of photonic-crystal-trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.

KW - Bessel beams

KW - high-efficiency solar-to-electrical energy conversions

KW - Lambertian limits

KW - Si solar cells

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U2 - 10.48550/arXiv.2403.14237

DO - 10.48550/arXiv.2403.14237

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JO - Advanced engineering materials

JF - Advanced engineering materials

SN - 1438-1656

ER -

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