Influence of scattering processes on the electronic properties of composite fermions

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  • Max Planck Institute for Solid State Research (MPI-FKF)
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Original languageEnglish
Pages (from-to)99-101
Number of pages3
JournalSurface science
Volume361-362
Publication statusPublished - 20 Jul 1996
Externally publishedYes

Abstract

Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

Keywords

    Conductivity, Gallium arsenide, Heterojunctions, Magnetic phenomena, Many body and quasi-particle theories, Molecular beam epitaxy, Semiconductor-semiconductor heterostructures

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Cite this

Influence of scattering processes on the electronic properties of composite fermions. / Kukushkin, I. V.; Haug, R. J.; Von Klitzing, K. et al.
In: Surface science, Vol. 361-362, 20.07.1996, p. 99-101.

Research output: Contribution to journalArticleResearchpeer review

Kukushkin IV, Haug RJ, Von Klitzing K, Eberl K. Influence of scattering processes on the electronic properties of composite fermions. Surface science. 1996 Jul 20;361-362:99-101. doi: 10.1016/0039-6028(96)00340-8
Kukushkin, I. V. ; Haug, R. J. ; Von Klitzing, K. et al. / Influence of scattering processes on the electronic properties of composite fermions. In: Surface science. 1996 ; Vol. 361-362. pp. 99-101.
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AU - Kukushkin, I. V.

AU - Haug, R. J.

AU - Von Klitzing, K.

AU - Eberl, K.

PY - 1996/7/20

Y1 - 1996/7/20

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KW - Gallium arsenide

KW - Heterojunctions

KW - Magnetic phenomena

KW - Many body and quasi-particle theories

KW - Molecular beam epitaxy

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