Details
Original language | English |
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Title of host publication | 2024 37th International Vacuum Nanoelectronics Conference (IVNC) |
ISBN (electronic) | 979-8-3503-7976-1 |
Publication status | Published - 2024 |
Publication series
Name | International Vacuum Nanoelectronics Conference proceedings |
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ISSN (Print) | 2164-2370 |
ISSN (electronic) | 2380-6311 |
Abstract
This work focuses on designing and fabricating an optimized extraction electrode made out of borofloat glass. The electrode is a part of an emitter chip, where the field emitters are manufactured by the wafer dicing technique. The extraction electrode was fabricated by Selective Laser Etch (SLE) process, where the geometry comprises an array of Through-Glass-Vias (TGV) that are positioned concentrically over each emitter tip, a cavity in the area of the TGVs, additional cavities for lowering of the electrode and TGVs for dowel pins for alignment. The current-voltage experiments confirm the enhancement in the measured field emission current dependent on the geometry of the extraction electrode.
Keywords
- FEA, SLE, dicing field emitters, glass extraction electrode, laser assisted bonding, silicon field emitters
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Instrumentation
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2024 37th International Vacuum Nanoelectronics Conference (IVNC). 2024. (International Vacuum Nanoelectronics Conference proceedings).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Glass-Extraction Electrode for Field Emission Applications
AU - Buchta, Aleksandra M.
AU - Kassner, Alexander
AU - Dencker, Folke
AU - Wurz, Marc C.
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This work focuses on designing and fabricating an optimized extraction electrode made out of borofloat glass. The electrode is a part of an emitter chip, where the field emitters are manufactured by the wafer dicing technique. The extraction electrode was fabricated by Selective Laser Etch (SLE) process, where the geometry comprises an array of Through-Glass-Vias (TGV) that are positioned concentrically over each emitter tip, a cavity in the area of the TGVs, additional cavities for lowering of the electrode and TGVs for dowel pins for alignment. The current-voltage experiments confirm the enhancement in the measured field emission current dependent on the geometry of the extraction electrode.
AB - This work focuses on designing and fabricating an optimized extraction electrode made out of borofloat glass. The electrode is a part of an emitter chip, where the field emitters are manufactured by the wafer dicing technique. The extraction electrode was fabricated by Selective Laser Etch (SLE) process, where the geometry comprises an array of Through-Glass-Vias (TGV) that are positioned concentrically over each emitter tip, a cavity in the area of the TGVs, additional cavities for lowering of the electrode and TGVs for dowel pins for alignment. The current-voltage experiments confirm the enhancement in the measured field emission current dependent on the geometry of the extraction electrode.
KW - FEA
KW - SLE
KW - dicing field emitters
KW - glass extraction electrode
KW - laser assisted bonding
KW - silicon field emitters
UR - http://www.scopus.com/inward/record.url?scp=85204099771&partnerID=8YFLogxK
U2 - 10.1109/ivnc63480.2024.10652278
DO - 10.1109/ivnc63480.2024.10652278
M3 - Conference contribution
SN - 979-8-3503-7977-8
T3 - International Vacuum Nanoelectronics Conference proceedings
BT - 2024 37th International Vacuum Nanoelectronics Conference (IVNC)
ER -