EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

External Research Organisations

  • Reutlingen University
  • Infineon Technologies AG
  • Robert Bosch Centre for Power Electronics (RBZ)
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Details

Original languageEnglish
Title of host publicationEMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages18-23
Number of pages6
ISBN (electronic)9781467378963
Publication statusPublished - 15 Dec 2015
Externally publishedYes
Event10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2015 - Edinburgh, United Kingdom (UK)
Duration: 10 Nov 201513 Nov 2015

Publication series

NameEMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits

Abstract

There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.

ASJC Scopus subject areas

Cite this

EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. / Schindler, Alexis; Koeppl, Benno; Wicht, Bernhard.
EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2015. p. 18-23 7358323 (EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Schindler, A, Koeppl, B & Wicht, B 2015, EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. in EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits., 7358323, EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, Institute of Electrical and Electronics Engineers Inc., pp. 18-23, 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2015, Edinburgh, United Kingdom (UK), 10 Nov 2015. https://doi.org/10.1109/EMCCompo.2015.7358323
Schindler, A., Koeppl, B., & Wicht, B. (2015). EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. In EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (pp. 18-23). Article 7358323 (EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EMCCompo.2015.7358323
Schindler A, Koeppl B, Wicht B. EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. In EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc. 2015. p. 18-23. 7358323. (EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits). doi: 10.1109/EMCCompo.2015.7358323
Schindler, Alexis ; Koeppl, Benno ; Wicht, Bernhard. / EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 18-23 (EMC Compo 2015 - 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits).
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abstract = "There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase in switching losses. In order to find an optimal trade-off, this work utilizes a monolithic current mode gate driver with a variable output current that can be changed within 10ns. With this driver, measurements with different gate current profiles were taken. The di/dt transition was confirmed to be as important as the dv/dt transition in the power MOSFET. As a result of the improved switching behavior the emissions were reduced by up to 20dB between 7MHz and 60MHz with a switching loss that is 52% lower than with a constantly low gate current.",
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AU - Koeppl, Benno

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N1 - Publisher Copyright: © 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

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