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IEEE Transactions on Electron Devices

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Publications

  1. 2021

  2. Published

    Epi-GdO-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT with Improved ION/IOFFOperating at 473 K

    Sarkar, R., Upadhyay, B. B., Bhunia, S., Pokharia, R. S., Nag, D., Surapaneni, S., Lemettinen, J., Suihkonen, S., Gribisch, P., Osten, H. J., Ganguly, S., Saha, D. & Laha, A., 22 Apr 2021, In: IEEE Transactions on Electron Devices. 68, 6, p. 2653-2660 8 p., 9411704.

    Research output: Contribution to journal › Article › Research › peer review

  3. 2016

  4. Published

    Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices

    Ghosh, K., Das, S., Fissel, A., Osten, H. J. & Laha, A., Jul 2016, In: IEEE Transactions on Electron Devices. 63, 7, p. 2852-2857 6 p., 7480385.

    Research output: Contribution to journal › Article › Research › peer review

  5. 2012

  6. Published

    19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations

    Petermann, J. H., Ohrdes, T., Altermatt, P. P., Eidelloth, S. & Brendel, R., 6 Feb 2012, In: IEEE Transactions on Electron Devices. 59, 4, p. 909-917 9 p., 6146417.

    Research output: Contribution to journal › Article › Research › peer review

  7. 2010

  8. External

    The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter

    Bock, R., Schmidt, J., Mau, S., Hoex, B. & Brendel, R., Aug 2010, In: IEEE Transactions on Electron Devices. 57, 8, p. 1966-1971 6 p., 5497122.

    Research output: Contribution to journal › Article › Research › peer review

  9. 1999

  10. External

    Measurement of differential and actual recombination parameters on crystalline silicon wafers

    Schmidt, J., Oct 1999, In: IEEE Transactions on Electron Devices. 46, 10, p. 2018-2025 8 p.

    Research output: Contribution to journal › Article › Research › peer review

  11. External

    Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

    Osten, H. J., Knoll, D., Heinemann, B. & Schley, P., Sept 1999, In: IEEE Transactions on Electron Devices. 46, 9, p. 1910-1912 3 p.

    Research output: Contribution to journal › Article › Research › peer review