Details
| Original language | English |
|---|---|
| Article number | 5497122 |
| Pages (from-to) | 1966-1971 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 57 |
| Issue number | 8 |
| Early online date | 28 Jun 2010 |
| Publication status | Published - Aug 2010 |
| Externally published | Yes |
Abstract
Aluminum-doped p-type (Al- p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 °C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
Keywords
- Aluminium oxide, amorphus silicon, atomic layer deposition, emitter passivation, n-type silicon, passivation, photovoltaic cells, screen-printed emitter
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE Transactions on Electron Devices, Vol. 57, No. 8, 5497122, 08.2010, p. 1966-1971.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - The ALU+ concept
T2 - N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
AU - Bock, Robert
AU - Schmidt, Jan
AU - Mau, Susanne
AU - Hoex, Bram
AU - Brendel, Rolf
N1 - Funding Information: Manuscript received December 11, 2009; revised April 27, 2010; accepted May 11, 2010. Date of publication June 28, 2010; date of current version July 23, 2010. This work was supported by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under Contract No. 0327666 (ALU+). The review of this paper was arranged by Editor S. Ringel.
PY - 2010/8
Y1 - 2010/8
N2 - Aluminum-doped p-type (Al- p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 °C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
AB - Aluminum-doped p-type (Al- p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 °C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
KW - Aluminium oxide
KW - amorphus silicon
KW - atomic layer deposition
KW - emitter passivation
KW - n-type silicon
KW - passivation
KW - photovoltaic cells
KW - screen-printed emitter
UR - http://www.scopus.com/inward/record.url?scp=77955137891&partnerID=8YFLogxK
U2 - 10.1109/TED.2010.2050953
DO - 10.1109/TED.2010.2050953
M3 - Article
AN - SCOPUS:77955137891
VL - 57
SP - 1966
EP - 1971
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 8
M1 - 5497122
ER -