Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) |
| Seiten | 207-209 |
| Seitenumfang | 3 |
| ISBN (elektronisch) | 979-8-3503-0143-4 |
| Publikationsstatus | Veröffentlicht - 27 Juli 2023 |
Publikationsreihe
| Name | International Vacuum Nanoelectronics Conference |
|---|---|
| ISSN (Print) | 2164-2370 |
| ISSN (elektronisch) | 2380-6311 |
Abstract
This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Instrumentierung
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC). 2023. S. 207-209 ( International Vacuum Nanoelectronics Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Novel Glass-Silicon Emitter Chip for Field Emission Applications
AU - Buchta, Aleksandra M.
AU - Kassner, Alexander
AU - Voß, Julia
AU - Leopold, Tobias
AU - Petring, Julian
AU - Diekmann, Leonard
AU - Dencker, Folke
AU - Wurz, Marc C.
N1 - Funding Information: This work has been carried out as a part of the joint project "Innovative Vacuum Technology for Quantum Sensors" (InnoVaQ) funded by the German Federal Ministry of Education and Research (BMBF) as part of the funding program "Quantum Technologies – from basic research to market". (Contract number: 13N15919).
PY - 2023/7/27
Y1 - 2023/7/27
N2 - This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.
AB - This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.
KW - FEA
KW - LIDE
KW - dicing field emitters
KW - glass extraction electrode
KW - silicon field emitters
UR - http://www.scopus.com/inward/record.url?scp=85168674400&partnerID=8YFLogxK
U2 - 10.1109/ivnc57695.2023.10188880
DO - 10.1109/ivnc57695.2023.10188880
M3 - Conference contribution
SN - 979-8-3503-0144-1
T3 - International Vacuum Nanoelectronics Conference
SP - 207
EP - 209
BT - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)
ER -