Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Jörgen Jungclaus
  • Hendrik Spende
  • Pascal Hille
  • Jörg Schörmann
  • Andreas Waag
  • Martin Eickhoff
  • Tobias Voss

External Research Organisations

  • Technische Universität Braunschweig
  • University of Bremen
  • Justus Liebig University Giessen
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Details

Original languageEnglish
Article number034001
JournalNano Express
Volume2
Issue number3
Publication statusPublished - 13 Jul 2021
Externally publishedYes

Abstract

Light emitting diodes represent a key technology that can be found in many areas of everydays life. Therefore, the improvement of the efficiency of such structures offers a high economic and ecological potential. One approach is electrostatic screening of the quantum-confined Stark effect (QCSE) in polar III-V heterostructures by n-type doping in order to increase the oscillator strength of electronic transitions in quantum structures. In this study, we analyzed the cathodoluminescene (CL) spectra of different functional parts of individual AlN/GaN nanowire superlattices and studied their decay characteristics with sub-nanosecond time resolution. This allows us to extract information about strain and electric fields in such heterostructures with an overall spatial resolution <100 nm. The samples, which were investigated in a temperature range from 10 to 300 K by using time-integrated cathodoluminescence spectroscopy (TICL) and time-resolved cathodoluminescence spectroscopy (TRCL) consist of GaN bottom and top layer and a 40-fold stack of GaN nanodiscs, embedded in AlN barriers that were doped with Ge. We show, that the QCSE is reduced with increasing doping concentration due to a screening of the internal electric fields inside GaN nanodiscs, resulting in a reduction of the carrier lifetimes and a blue shift of the emitted light. Due to the small diameter of the electron excitation beam CL offers the possibility to individually analyze the different functional parts of the nanowires.

Keywords

    AlN/GaN nanowire structures, cathodoluminescence, doped nanowires, GaN nanowires, nanowires, quantum-confined Stark effect, time-resolved cathodoluminescence

ASJC Scopus subject areas

Cite this

Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. / Jungclaus, Jörgen; Spende, Hendrik; Hille, Pascal et al.
In: Nano Express, Vol. 2, No. 3, 034001, 13.07.2021.

Research output: Contribution to journalArticleResearchpeer review

Jungclaus, J, Spende, H, Hille, P, Schörmann, J, Waag, A, Eickhoff, M & Voss, T 2021, 'Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures', Nano Express, vol. 2, no. 3, 034001. https://doi.org/10.1088/2632-959x/ac0598
Jungclaus, J., Spende, H., Hille, P., Schörmann, J., Waag, A., Eickhoff, M., & Voss, T. (2021). Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. Nano Express, 2(3), Article 034001. https://doi.org/10.1088/2632-959x/ac0598
Jungclaus J, Spende H, Hille P, Schörmann J, Waag A, Eickhoff M et al. Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. Nano Express. 2021 Jul 13;2(3):034001. doi: 10.1088/2632-959x/ac0598
Jungclaus, Jörgen ; Spende, Hendrik ; Hille, Pascal et al. / Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. In: Nano Express. 2021 ; Vol. 2, No. 3.
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AU - Jungclaus, Jörgen

AU - Spende, Hendrik

AU - Hille, Pascal

AU - Schörmann, Jörg

AU - Waag, Andreas

AU - Eickhoff, Martin

AU - Voss, Tobias

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