Details
| Original language | English |
|---|---|
| Pages | 107-112 |
| Number of pages | 6 |
| Publication status | Published - 2016 |
| Event | 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 - Nuremberg, Germany Duration: 10 May 2016 → 12 May 2016 |
Conference
| Conference | 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 |
|---|---|
| Country/Territory | Germany |
| City | Nuremberg |
| Period | 10 May 2016 → 12 May 2016 |
Abstract
In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Mathematics(all)
- Control and Optimization
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Computer Science(all)
- Artificial Intelligence
- Computer Science(all)
- Hardware and Architecture
- Energy(all)
- Energy Engineering and Power Technology
Sustainable Development Goals
Cite this
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2016. 107-112 Paper presented at 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016, Nuremberg, Germany.
Research output: Contribution to conference › Paper › Research › peer review
}
TY - CONF
T1 - Thin-film based microtransformer suitable for high switching frequency power applications
AU - Dinulovic, Dragan
AU - Shousha, Mahmoud
AU - Haug, Martin
AU - Beringer, Sebastian
AU - Wurz, Marc Christopher
N1 - Publisher Copyright: © VDE VERLAG GMBH · Berlin · Offenbach. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
AB - In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
UR - http://www.scopus.com/inward/record.url?scp=85025657951&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:85025657951
SP - 107
EP - 112
T2 - 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016
Y2 - 10 May 2016 through 12 May 2016
ER -