Process, geometry and stack related reliability of thick ALCU-metal-tracks

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  • X-FAB Silicon Foundries SE
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Details

Original languageEnglish
Title of host publication2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-7
Number of pages7
ISBN (electronic)9781944543044
Publication statusPublished - 15 Mar 2018
Event2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018 - Big Island, United States
Duration: 5 Feb 20188 Feb 2018

Abstract

The downscaling in VLSI systems and the use of new materials requires the development of new test structures and in the case of harsh environment conditions the change of the test conditions to higher applied currents and test temperatures. Furthermore the application in wider operating areas and more challenging mission profiles leads to a concept of highly robust metallization stacks [1] in a metal stack system up to eight levels. These stacks can contain a thick top metallization track for high current or RF application. Looking on the metallization systems of liners and cap materials as well as the current carrying metal themselves the differences in the coefficient of thermal expansion (CTE) of the materials lead to intrinsic tension and can result in fatal delamination of the metallization. Different failure mechanisms and complicate interaction of effects in the operating area can result. The reliability of thick metal tracks is still not in focus of considerations. But the mechanical stability especially at chip corner and edge as well as local higher electromigration (EM) can be critical. With the help of finite element analysis the thermal-electrical-mechanical behavior of metallization systems and new design concepts can be investigated. Furthermore migration effects can be analyzed and a comparison of simulated and obtained behavior can be done and support reliability assessment.

Keywords

    Metallization, Migration, Reliability, Simulation, Thick metal

ASJC Scopus subject areas

Cite this

Process, geometry and stack related reliability of thick ALCU-metal-tracks. / Weide-Zaage, Kirsten; Hein, Verena.
2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-7.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Weide-Zaage, K & Hein, V 2018, Process, geometry and stack related reliability of thick ALCU-metal-tracks. in 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018. Institute of Electrical and Electronics Engineers Inc., pp. 1-7, 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018, Big Island, United States, 5 Feb 2018. https://doi.org/10.23919/panpacific.2018.8319008
Weide-Zaage, K., & Hein, V. (2018). Process, geometry and stack related reliability of thick ALCU-metal-tracks. In 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018 (pp. 1-7). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/panpacific.2018.8319008
Weide-Zaage K, Hein V. Process, geometry and stack related reliability of thick ALCU-metal-tracks. In 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-7 doi: 10.23919/panpacific.2018.8319008
Weide-Zaage, Kirsten ; Hein, Verena. / Process, geometry and stack related reliability of thick ALCU-metal-tracks. 2018 Pan Pacific Microelectronics Symposium, Pan Pacific 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-7
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