Details
| Original language | English |
|---|---|
| Pages (from-to) | 18322-18332 |
| Number of pages | 11 |
| Journal | Nanoscale |
| Volume | 12 |
| Issue number | 35 |
| Early online date | 27 Aug 2020 |
| Publication status | Published - 21 Sept 2020 |
Abstract
Resistive switching devices offer a great potential for advanced computing and data storage, including neuromorphic networks and random-access memory. State-of-the-art memristors are mostly realized by a three-layer structure, which is comprised of an active metal oxide layer sandwiched between two metal electrodes. Thus, there is always an interface involving two materials differing strongly in crystallographic and electronic properties. In this study, we present a resistive switching nanorod device based on a metal oxide sandwiched between two transparent conductive oxide electrodes. Thus, the system is characterized by a different, smooth interface offering new possibilities for increased energy efficiency and transparent electronics. Antimony-doped tin oxide (ATO) is used as an electrode material. The heavily doped ATO nanorods, exhibiting a good conductivity, are produced by a templated electrochemical deposition approach of alloy particles with subsequent thermal oxidation. The process enables precise control of the doping level within the nanorods and the formation of a doping level gradient. Electrical characterization reveals that a stronger gradient between heavily doped and undoped tin oxide within the nanorods results in a more rectifying character of the junction. Three-domain nanorods consisting of an undoped tin oxide segment in between two ATO segments are utilized to introduce memristive properties into the nanorod device. The resistive switching of these nanorods can be attributed to an oxygen vacancy doping gradient introduced during thermal oxidation. These vacancies are mobile within the tin oxide host structure and their injection from the ATO segment into the undoped tin oxide segment results in altered conductivity of the device, when an external bias is applied.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
Sustainable Development Goals
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In: Nanoscale, Vol. 12, No. 35, 21.09.2020, p. 18322-18332.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods
AU - Herzog, Thomas
AU - Weitzel, Naomi
AU - Polarz, Sebastian
N1 - Funding Information: We gratefully acknowledge technical/instrumental support from the German Research Foundation (DFG) via SFB1214 Project Z1 Particle Analysis Center and the Nanolab of the University of Konstanz.
PY - 2020/9/21
Y1 - 2020/9/21
N2 - Resistive switching devices offer a great potential for advanced computing and data storage, including neuromorphic networks and random-access memory. State-of-the-art memristors are mostly realized by a three-layer structure, which is comprised of an active metal oxide layer sandwiched between two metal electrodes. Thus, there is always an interface involving two materials differing strongly in crystallographic and electronic properties. In this study, we present a resistive switching nanorod device based on a metal oxide sandwiched between two transparent conductive oxide electrodes. Thus, the system is characterized by a different, smooth interface offering new possibilities for increased energy efficiency and transparent electronics. Antimony-doped tin oxide (ATO) is used as an electrode material. The heavily doped ATO nanorods, exhibiting a good conductivity, are produced by a templated electrochemical deposition approach of alloy particles with subsequent thermal oxidation. The process enables precise control of the doping level within the nanorods and the formation of a doping level gradient. Electrical characterization reveals that a stronger gradient between heavily doped and undoped tin oxide within the nanorods results in a more rectifying character of the junction. Three-domain nanorods consisting of an undoped tin oxide segment in between two ATO segments are utilized to introduce memristive properties into the nanorod device. The resistive switching of these nanorods can be attributed to an oxygen vacancy doping gradient introduced during thermal oxidation. These vacancies are mobile within the tin oxide host structure and their injection from the ATO segment into the undoped tin oxide segment results in altered conductivity of the device, when an external bias is applied.
AB - Resistive switching devices offer a great potential for advanced computing and data storage, including neuromorphic networks and random-access memory. State-of-the-art memristors are mostly realized by a three-layer structure, which is comprised of an active metal oxide layer sandwiched between two metal electrodes. Thus, there is always an interface involving two materials differing strongly in crystallographic and electronic properties. In this study, we present a resistive switching nanorod device based on a metal oxide sandwiched between two transparent conductive oxide electrodes. Thus, the system is characterized by a different, smooth interface offering new possibilities for increased energy efficiency and transparent electronics. Antimony-doped tin oxide (ATO) is used as an electrode material. The heavily doped ATO nanorods, exhibiting a good conductivity, are produced by a templated electrochemical deposition approach of alloy particles with subsequent thermal oxidation. The process enables precise control of the doping level within the nanorods and the formation of a doping level gradient. Electrical characterization reveals that a stronger gradient between heavily doped and undoped tin oxide within the nanorods results in a more rectifying character of the junction. Three-domain nanorods consisting of an undoped tin oxide segment in between two ATO segments are utilized to introduce memristive properties into the nanorod device. The resistive switching of these nanorods can be attributed to an oxygen vacancy doping gradient introduced during thermal oxidation. These vacancies are mobile within the tin oxide host structure and their injection from the ATO segment into the undoped tin oxide segment results in altered conductivity of the device, when an external bias is applied.
UR - http://www.scopus.com/inward/record.url?scp=85091264143&partnerID=8YFLogxK
U2 - 10.1039/d0nr03734f
DO - 10.1039/d0nr03734f
M3 - Article
C2 - 32869823
AN - SCOPUS:85091264143
VL - 12
SP - 18322
EP - 18332
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 35
ER -