Details
Original language | English |
---|---|
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | Optical Engineering |
Volume | 44 |
Issue number | 5 |
Publication status | Published - 1 May 2005 |
Externally published | Yes |
Abstract
The physical effects reducing the damage threshold of dielectric films when exposed to multiple femtosecond pulses are investigated. The measured temperature increase of a Ta2O5 film scales exponentially with the pulse fluence. A polarized luminescence signal is observed that depends quadratically on the pulse fluence and is attributed to two-photon excitation of self-trapped excitons that form after band-to-band excitation. The damage fluence decreases with increasing pulse number, but is independent of the repetition rate from 1 Hz to 1 kHz at a constant pulse number. The repetition rate dependence of the breakdown threshold is also measured for TiO2, HfO2, Al2O3, and SiO2 films. A theoretical model is presented that explains these findings.
Keywords
- Coatings, Laser materials, Laser-induced damage, Ultrafast phenomena
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- General Engineering
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In: Optical Engineering, Vol. 44, No. 5, 01.05.2005, p. 1-7.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - On the damage behavior of dielectric films when illuminated with multiple femtosecond laser pulses
AU - Mero, Mark
AU - Clapp, Benjamin
AU - Jasapara, Jayesh C.
AU - Rudolph, Wolfgang
AU - Ristau, Detlev
AU - Starke, Kai
AU - Krüger, Jörg
AU - Martin, Sven
AU - Kautek, Wolfgang
N1 - Funding information: The authors thank Dr. J. Liu for helpful discussions and support with the data acquisition. The project was supported by the National Science Foundation (NSF) under Grant No. ECS-0100636 and Grant No. DGE-0114319 and by the Defense Advanced Research Projects Agency–Joint Technology Office (DARPA-JTO) under Grant. No. 2001-025. The Berlin group acknowledges financial support by the German Federal Ministry of Education and Research in the framework of the project ‘‘Safety for Applications of Femtosecond Laser Technology’’—SAFEST (BMBF-Projektverband Femtosekundentechnologie).
PY - 2005/5/1
Y1 - 2005/5/1
N2 - The physical effects reducing the damage threshold of dielectric films when exposed to multiple femtosecond pulses are investigated. The measured temperature increase of a Ta2O5 film scales exponentially with the pulse fluence. A polarized luminescence signal is observed that depends quadratically on the pulse fluence and is attributed to two-photon excitation of self-trapped excitons that form after band-to-band excitation. The damage fluence decreases with increasing pulse number, but is independent of the repetition rate from 1 Hz to 1 kHz at a constant pulse number. The repetition rate dependence of the breakdown threshold is also measured for TiO2, HfO2, Al2O3, and SiO2 films. A theoretical model is presented that explains these findings.
AB - The physical effects reducing the damage threshold of dielectric films when exposed to multiple femtosecond pulses are investigated. The measured temperature increase of a Ta2O5 film scales exponentially with the pulse fluence. A polarized luminescence signal is observed that depends quadratically on the pulse fluence and is attributed to two-photon excitation of self-trapped excitons that form after band-to-band excitation. The damage fluence decreases with increasing pulse number, but is independent of the repetition rate from 1 Hz to 1 kHz at a constant pulse number. The repetition rate dependence of the breakdown threshold is also measured for TiO2, HfO2, Al2O3, and SiO2 films. A theoretical model is presented that explains these findings.
KW - Coatings
KW - Laser materials
KW - Laser-induced damage
KW - Ultrafast phenomena
UR - http://www.scopus.com/inward/record.url?scp=24044480054&partnerID=8YFLogxK
U2 - 10.1117/1.1905343
DO - 10.1117/1.1905343
M3 - Article
AN - SCOPUS:24044480054
VL - 44
SP - 1
EP - 7
JO - Optical Engineering
JF - Optical Engineering
SN - 0091-3286
IS - 5
ER -