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Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • A. Krauze
  • A. Muiznieks
  • A. Mühlbauer
  • Th Wetzel

External Research Organisations

  • University of Latvia
  • Siltronic AG
  • Ctr. for Precesses' Anal./Research

Details

Original languageEnglish
Pages (from-to)40-47
Number of pages8
JournalJournal of crystal growth
Volume266
Issue number1-3
Early online date28 Mar 2004
Publication statusPublished - 15 May 2004
EventFourth International Workshop on Modeling - Kyushu, Japan
Duration: 4 Nov 20037 Nov 2003

Abstract

The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ growth system. The purpose of the investigation is to examine turbulent melt flow features that develop in the model crucible, when various dynamic magnetic fields (travelling, alternating) are applied, and to test the applicability of the modified low Re k-ε turbulence model for the calculation of flows in these cases by extensive comparisons between calculated and measured data. The electromagnetic field is calculated with a self-developed program, and the calculations of the melt motion are carried out with the user modified hydrodynamic program package CFD-ACE. Extremely fine grid and the modified low Re k-ε turbulence model are used in hydrodynamic calculations. The flow features and temperature fields are investigated, and the influence of dynamic field strength and crucible and crystal rotation is shown. A comparison between calculation results and temperature measurements in a corresponding laboratory model with low-temperature InGaSn eutectic has shown good agreement.

Keywords

    A1. Computer simulation, A1. Fluid flows, A1. Heat transfer, A2. Industrial crystallization, A2. Magnetic field assisted Czochralski method, B2. Semiconducting silicon

ASJC Scopus subject areas

Cite this

Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields. / Krauze, A.; Muiznieks, A.; Mühlbauer, A. et al.
In: Journal of crystal growth, Vol. 266, No. 1-3, 15.05.2004, p. 40-47.

Research output: Contribution to journalConference articleResearchpeer review

Krauze, A, Muiznieks, A, Mühlbauer, A, Wetzel, T, Gorbunov, L, Pedchenko, A & Virbulis, J 2004, 'Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields', Journal of crystal growth, vol. 266, no. 1-3, pp. 40-47. https://doi.org/10.1016/j.jcrysgro.2004.02.028
Krauze, A., Muiznieks, A., Mühlbauer, A., Wetzel, T., Gorbunov, L., Pedchenko, A., & Virbulis, J. (2004). Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields. Journal of crystal growth, 266(1-3), 40-47. https://doi.org/10.1016/j.jcrysgro.2004.02.028
Krauze A, Muiznieks A, Mühlbauer A, Wetzel T, Gorbunov L, Pedchenko A et al. Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields. Journal of crystal growth. 2004 May 15;266(1-3):40-47. Epub 2004 Mar 28. doi: 10.1016/j.jcrysgro.2004.02.028
Krauze, A. ; Muiznieks, A. ; Mühlbauer, A. et al. / Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields. In: Journal of crystal growth. 2004 ; Vol. 266, No. 1-3. pp. 40-47.
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@article{2795106a2c3f4b6ab68cc53e2aaea89d,
title = "Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields",
abstract = "The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ growth system. The purpose of the investigation is to examine turbulent melt flow features that develop in the model crucible, when various dynamic magnetic fields (travelling, alternating) are applied, and to test the applicability of the modified low Re k-ε turbulence model for the calculation of flows in these cases by extensive comparisons between calculated and measured data. The electromagnetic field is calculated with a self-developed program, and the calculations of the melt motion are carried out with the user modified hydrodynamic program package CFD-ACE. Extremely fine grid and the modified low Re k-ε turbulence model are used in hydrodynamic calculations. The flow features and temperature fields are investigated, and the influence of dynamic field strength and crucible and crystal rotation is shown. A comparison between calculation results and temperature measurements in a corresponding laboratory model with low-temperature InGaSn eutectic has shown good agreement.",
keywords = "A1. Computer simulation, A1. Fluid flows, A1. Heat transfer, A2. Industrial crystallization, A2. Magnetic field assisted Czochralski method, B2. Semiconducting silicon",
author = "A. Krauze and A. Muiznieks and A. M{\"u}hlbauer and Th Wetzel and L. Gorbunov and A. Pedchenko and J. Virbulis",
note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Fourth International Workshop on Modeling ; Conference date: 04-11-2003 Through 07-11-2003",
year = "2004",
month = may,
day = "15",
doi = "10.1016/j.jcrysgro.2004.02.028",
language = "English",
volume = "266",
pages = "40--47",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier BV",
number = "1-3",

}

Download

TY - JOUR

T1 - Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields

AU - Krauze, A.

AU - Muiznieks, A.

AU - Mühlbauer, A.

AU - Wetzel, Th

AU - Gorbunov, L.

AU - Pedchenko, A.

AU - Virbulis, J.

N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ growth system. The purpose of the investigation is to examine turbulent melt flow features that develop in the model crucible, when various dynamic magnetic fields (travelling, alternating) are applied, and to test the applicability of the modified low Re k-ε turbulence model for the calculation of flows in these cases by extensive comparisons between calculated and measured data. The electromagnetic field is calculated with a self-developed program, and the calculations of the melt motion are carried out with the user modified hydrodynamic program package CFD-ACE. Extremely fine grid and the modified low Re k-ε turbulence model are used in hydrodynamic calculations. The flow features and temperature fields are investigated, and the influence of dynamic field strength and crucible and crystal rotation is shown. A comparison between calculation results and temperature measurements in a corresponding laboratory model with low-temperature InGaSn eutectic has shown good agreement.

AB - The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ growth system. The purpose of the investigation is to examine turbulent melt flow features that develop in the model crucible, when various dynamic magnetic fields (travelling, alternating) are applied, and to test the applicability of the modified low Re k-ε turbulence model for the calculation of flows in these cases by extensive comparisons between calculated and measured data. The electromagnetic field is calculated with a self-developed program, and the calculations of the melt motion are carried out with the user modified hydrodynamic program package CFD-ACE. Extremely fine grid and the modified low Re k-ε turbulence model are used in hydrodynamic calculations. The flow features and temperature fields are investigated, and the influence of dynamic field strength and crucible and crystal rotation is shown. A comparison between calculation results and temperature measurements in a corresponding laboratory model with low-temperature InGaSn eutectic has shown good agreement.

KW - A1. Computer simulation

KW - A1. Fluid flows

KW - A1. Heat transfer

KW - A2. Industrial crystallization

KW - A2. Magnetic field assisted Czochralski method

KW - B2. Semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=2342518245&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.02.028

DO - 10.1016/j.jcrysgro.2004.02.028

M3 - Conference article

AN - SCOPUS:2342518245

VL - 266

SP - 40

EP - 47

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-3

T2 - Fourth International Workshop on Modeling

Y2 - 4 November 2003 through 7 November 2003

ER -