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Modeling effective carrier lifetimes of passivated macroporous silicon layers

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Marco Ernst
  • Rolf Brendel

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)

Details

Original languageEnglish
Pages (from-to)1197-1202
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number4
Early online date4 Feb 2011
Publication statusPublished - Apr 2011

Abstract

We derive and apply a model that determines the effective minority carrier lifetime of macroporous crystalline silicon samples as a function of bulk lifetime, surface passivation and pore morphology. Two cases are considered: A layer of periodic macropores at the surface of a silicon wafer and a free standing macroporous silicon layer. We compare the model with experimental lifetime measurements for samples with randomly positioned macropores with a length of 1040 μm. The pores have an average pore diameter of 2.4 μm and an average pore distance of 5.2 μm. The surface is passivated by thermal oxidation. The model agrees with the measurements if we assume an average surface recombination velocity S=24 cm/s at the pore surface.

Keywords

    Carrier lifetime, Carrier transport, Macroporous Si, Modeling, Porous Si

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Modeling effective carrier lifetimes of passivated macroporous silicon layers. / Ernst, Marco; Brendel, Rolf.
In: Solar Energy Materials and Solar Cells, Vol. 95, No. 4, 04.2011, p. 1197-1202.

Research output: Contribution to journalArticleResearchpeer review

Ernst M, Brendel R. Modeling effective carrier lifetimes of passivated macroporous silicon layers. Solar Energy Materials and Solar Cells. 2011 Apr;95(4):1197-1202. Epub 2011 Feb 4. doi: 10.1016/j.solmat.2011.01.017
Ernst, Marco ; Brendel, Rolf. / Modeling effective carrier lifetimes of passivated macroporous silicon layers. In: Solar Energy Materials and Solar Cells. 2011 ; Vol. 95, No. 4. pp. 1197-1202.
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