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Modeling and simulation techniques for voltage drop due to multiple input switching transitions

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Hedi Harizi
  • Markus Olbrich
  • Erich Barke

Research Organisations

Details

Original languageEnglish
Title of host publication2009 International Conference on Computer and Electrical Engineering, ICCEE 2009
Pages546-550
Number of pages5
Publication statusPublished - 2009
Event2009 International Conference on Computer and Electrical Engineering, ICCEE 2009 - Dubai, United Arab Emirates
Duration: 28 Dec 200930 Dec 2009

Publication series

Name2009 International Conference on Computer and Electrical Engineering, ICCEE 2009
Volume2

Abstract

As IC technology scales down, the metal width is decreasing, making the resistance along the power lines increase substantially. Together with the nonlinear scaling of the threshold voltage that makes the ratio of the threshold voltage to the supply voltage rise, the IR drop becomes a serious problem in modern VLSI design. Thus, the verification of the power distribution network is of critical importance to ensure reliable performance. However, with the increasing number of transistors on a chip, the complexity of the power network has grown. The available computational power and memory resources impose limitations on the size of the networks that can be analyzed using currently known techniques. In this paper, we present a fast and efficient method to analyze power distribution networks in the time-domain. The key concepts in our approach are a current source-based model and a voltage controlled resistor. The library elements are pre-characterized with respect to the modeling requirements and their models are used during the transient simulation. The new model takes into acount the Multiple Input Switching (MIS) Transitions including Single Input Switching (SIS) Transitions, which mostly neglected in the past due to the fact that the resulting current waveforms are difficult to model. The proposed techniques provide good analysis results compared to the reference with a reduction of the run-time by a factor of 200, although the cell pre-characterization is based on SPICE simulation. Our model is independent of power network parasitics, which implies that different power network scenarios may be analyzed based on the same model and the same cell characterizations. The run-time and accuracy of the proposed approach are demonstrated on some industrial designs.

Keywords

    Cell library characterization, Current source model, MIS, SIS, Voltage drop

ASJC Scopus subject areas

Cite this

Modeling and simulation techniques for voltage drop due to multiple input switching transitions. / Harizi, Hedi; Olbrich, Markus; Barke, Erich.
2009 International Conference on Computer and Electrical Engineering, ICCEE 2009. 2009. p. 546-550 5380220 (2009 International Conference on Computer and Electrical Engineering, ICCEE 2009; Vol. 2).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Harizi, H, Olbrich, M & Barke, E 2009, Modeling and simulation techniques for voltage drop due to multiple input switching transitions. in 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009., 5380220, 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009, vol. 2, pp. 546-550, 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009, Dubai, United Arab Emirates, 28 Dec 2009. https://doi.org/10.1109/ICCEE.2009.242
Harizi, H., Olbrich, M., & Barke, E. (2009). Modeling and simulation techniques for voltage drop due to multiple input switching transitions. In 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009 (pp. 546-550). Article 5380220 (2009 International Conference on Computer and Electrical Engineering, ICCEE 2009; Vol. 2). https://doi.org/10.1109/ICCEE.2009.242
Harizi H, Olbrich M, Barke E. Modeling and simulation techniques for voltage drop due to multiple input switching transitions. In 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009. 2009. p. 546-550. 5380220. (2009 International Conference on Computer and Electrical Engineering, ICCEE 2009). doi: 10.1109/ICCEE.2009.242
Harizi, Hedi ; Olbrich, Markus ; Barke, Erich. / Modeling and simulation techniques for voltage drop due to multiple input switching transitions. 2009 International Conference on Computer and Electrical Engineering, ICCEE 2009. 2009. pp. 546-550 (2009 International Conference on Computer and Electrical Engineering, ICCEE 2009).
Download
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AU - Olbrich, Markus

AU - Barke, Erich

N1 - Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2009

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N2 - As IC technology scales down, the metal width is decreasing, making the resistance along the power lines increase substantially. Together with the nonlinear scaling of the threshold voltage that makes the ratio of the threshold voltage to the supply voltage rise, the IR drop becomes a serious problem in modern VLSI design. Thus, the verification of the power distribution network is of critical importance to ensure reliable performance. However, with the increasing number of transistors on a chip, the complexity of the power network has grown. The available computational power and memory resources impose limitations on the size of the networks that can be analyzed using currently known techniques. In this paper, we present a fast and efficient method to analyze power distribution networks in the time-domain. The key concepts in our approach are a current source-based model and a voltage controlled resistor. The library elements are pre-characterized with respect to the modeling requirements and their models are used during the transient simulation. The new model takes into acount the Multiple Input Switching (MIS) Transitions including Single Input Switching (SIS) Transitions, which mostly neglected in the past due to the fact that the resulting current waveforms are difficult to model. The proposed techniques provide good analysis results compared to the reference with a reduction of the run-time by a factor of 200, although the cell pre-characterization is based on SPICE simulation. Our model is independent of power network parasitics, which implies that different power network scenarios may be analyzed based on the same model and the same cell characterizations. The run-time and accuracy of the proposed approach are demonstrated on some industrial designs.

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