Details
| Original language | English |
|---|---|
| Article number | 092103 |
| Journal | Applied physics letters |
| Volume | 108 |
| Issue number | 9 |
| Publication status | Published - 29 Feb 2016 |
Abstract
Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects nS which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 108, No. 9, 092103, 29.02.2016.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of oval defects on transport properties in high-mobility two-dimensional electron gases
AU - Bockhorn, L.
AU - Velieva, A.
AU - Hakim, S.
AU - Wagner, T.
AU - Rugeramigabo, E. P.
AU - Schuh, D.
AU - Reichl, C.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2016/2/29
Y1 - 2016/2/29
N2 - Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects nS which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility.
AB - Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects nS which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility.
UR - http://www.scopus.com/inward/record.url?scp=84959576312&partnerID=8YFLogxK
U2 - 10.1063/1.4942886
DO - 10.1063/1.4942886
M3 - Article
AN - SCOPUS:84959576312
VL - 108
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 9
M1 - 092103
ER -