Details
| Original language | English |
|---|---|
| Pages (from-to) | 291-294 |
| Number of pages | 4 |
| Journal | Journal of crystal growth |
| Volume | 378 |
| Publication status | Published - 12 Oct 2012 |
| Externally published | Yes |
Abstract
We report on the molecular beam epitaxy growth of cubic GaN on 3C-SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C-SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the[110] directions of the substrate, are located in anti-phase domains of the 3C-SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.
Keywords
- Molecular beam epitaxy, Nanostructures, Nitrides, Planar defects, Selective epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 378, 12.10.2012, p. 291-294.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Growth of cubic GaN on 3C-SiC/Si (001) nanostructures
AU - Kemper, R. M.
AU - Hiller, L.
AU - Stauden, T.
AU - Pezoldt, J.
AU - Duschik, K.
AU - Niendorf, T.
AU - Maier, H. J.
AU - Meertens, D.
AU - Tillmann, K.
AU - As, D. J.
AU - Lindner, J. K.N.
PY - 2012/10/12
Y1 - 2012/10/12
N2 - We report on the molecular beam epitaxy growth of cubic GaN on 3C-SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C-SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the[110] directions of the substrate, are located in anti-phase domains of the 3C-SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.
AB - We report on the molecular beam epitaxy growth of cubic GaN on 3C-SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C-SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the[110] directions of the substrate, are located in anti-phase domains of the 3C-SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.
KW - Molecular beam epitaxy
KW - Nanostructures
KW - Nitrides
KW - Planar defects
KW - Selective epitaxy
UR - http://www.scopus.com/inward/record.url?scp=84885418360&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.10.011
DO - 10.1016/j.jcrysgro.2012.10.011
M3 - Article
AN - SCOPUS:84885418360
VL - 378
SP - 291
EP - 294
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
ER -