A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Bohayra Mortazavi
  • Fazel Shojaei
  • Mehmet Yagmurcukardes
  • Meysam Makaremi
  • Xiaoying Zhuang

External Research Organisations

  • Persian Gulf University
  • İzmir Institute of Technology
  • Tongji University
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Details

Original languageEnglish
Article number5479
JournalENERGIES
Volume15
Issue number15
Publication statusPublished - 28 Jul 2022

Abstract

In a recent advance, zirconium triselenide (ZrSe3) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman response, electronic, single-layer exfoliation energies, and mechanical features of the ZrX3 (X = S, Se, Te) monolayers. Acquired phonon dispersion relations reveal the dynamical stability of the ZrX3 (X = S, Se, Te) monolayers. In order to isolate single-layer crystals from bulk counterparts, exfoliation energies of 0.32, 0.37, and 0.4 J/m2 are predicted for the isolation of ZrS3, ZrSe3, and ZrTe3 monolayers, which are comparable to those of graphene. ZrS3 and ZrSe3 monolayers are found to be indirect gap semiconductors, with HSE06 band gaps of 1.93 and 1.01 eV, whereas the ZrTe3 monolayer yields a metallic character. It is shown that the ZrX3 nanosheets are relatively strong, but with highly anisotropic mechanical responses. This work provides a useful vision concerning the critical physical properties of ZrX3 (X = S, Se, Te) nanosheets.

Keywords

    electronic, exfoliation energy, mechanical, phonon dispersion, ZrSe

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers. / Mortazavi, Bohayra; Shojaei, Fazel; Yagmurcukardes, Mehmet et al.
In: ENERGIES, Vol. 15, No. 15, 5479, 28.07.2022.

Research output: Contribution to journalArticleResearchpeer review

Mortazavi, B., Shojaei, F., Yagmurcukardes, M., Makaremi, M., & Zhuang, X. (2022). A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers. ENERGIES, 15(15), Article 5479. https://doi.org/10.3390/en15155479
Mortazavi B, Shojaei F, Yagmurcukardes M, Makaremi M, Zhuang X. A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers. ENERGIES. 2022 Jul 28;15(15):5479. doi: 10.3390/en15155479
Mortazavi, Bohayra ; Shojaei, Fazel ; Yagmurcukardes, Mehmet et al. / A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers. In: ENERGIES. 2022 ; Vol. 15, No. 15.
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abstract = "In a recent advance, zirconium triselenide (ZrSe3) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman response, electronic, single-layer exfoliation energies, and mechanical features of the ZrX3 (X = S, Se, Te) monolayers. Acquired phonon dispersion relations reveal the dynamical stability of the ZrX3 (X = S, Se, Te) monolayers. In order to isolate single-layer crystals from bulk counterparts, exfoliation energies of 0.32, 0.37, and 0.4 J/m2 are predicted for the isolation of ZrS3, ZrSe3, and ZrTe3 monolayers, which are comparable to those of graphene. ZrS3 and ZrSe3 monolayers are found to be indirect gap semiconductors, with HSE06 band gaps of 1.93 and 1.01 eV, whereas the ZrTe3 monolayer yields a metallic character. It is shown that the ZrX3 nanosheets are relatively strong, but with highly anisotropic mechanical responses. This work provides a useful vision concerning the critical physical properties of ZrX3 (X = S, Se, Te) nanosheets.",
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T1 - A Theoretical Investigation on the Physical Properties of Zirconium Trichalcogenides, ZrS3, ZrSe3 and ZrTe3 Monolayers

AU - Mortazavi, Bohayra

AU - Shojaei, Fazel

AU - Yagmurcukardes, Mehmet

AU - Makaremi, Meysam

AU - Zhuang, Xiaoying

N1 - Funding Information: F.S. thanks the Persian Gulf University Research Council, Iran, for the support of this study. B.M. is thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources. Computational resources were partially provided by TUBITAKULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). This research was funded by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). This work was partially supported by the BAGEP Award of the Science Academy with funding supplied by the Sevinc-Erdal Inonu Foundation.

PY - 2022/7/28

Y1 - 2022/7/28

N2 - In a recent advance, zirconium triselenide (ZrSe3) nanosheets with anisotropic and strain-tunable excitonic response were experimentally fabricated. Motivated by the aforementioned progress, we conduct first-principle calculations to explore the structural, dynamic, Raman response, electronic, single-layer exfoliation energies, and mechanical features of the ZrX3 (X = S, Se, Te) monolayers. Acquired phonon dispersion relations reveal the dynamical stability of the ZrX3 (X = S, Se, Te) monolayers. In order to isolate single-layer crystals from bulk counterparts, exfoliation energies of 0.32, 0.37, and 0.4 J/m2 are predicted for the isolation of ZrS3, ZrSe3, and ZrTe3 monolayers, which are comparable to those of graphene. ZrS3 and ZrSe3 monolayers are found to be indirect gap semiconductors, with HSE06 band gaps of 1.93 and 1.01 eV, whereas the ZrTe3 monolayer yields a metallic character. It is shown that the ZrX3 nanosheets are relatively strong, but with highly anisotropic mechanical responses. This work provides a useful vision concerning the critical physical properties of ZrX3 (X = S, Se, Te) nanosheets.

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KW - mechanical

KW - phonon dispersion

KW - ZrSe

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