Details
| Original language | English |
|---|---|
| Pages (from-to) | 6109-6115 |
| Number of pages | 7 |
| Journal | Nano letters |
| Volume | 23 |
| Issue number | 13 |
| Early online date | 28 Jun 2023 |
| Publication status | Published - 12 Jul 2023 |
Abstract
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
Keywords
- diamond color centers, entangled photon pairs, GaAs semiconductor quantum dots, liquid nitrogen temperature, single photons, SiV zero phonon line
ASJC Scopus subject areas
- Chemical Engineering(all)
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanical Engineering
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In: Nano letters, Vol. 23, No. 13, 12.07.2023, p. 6109-6115.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K
AU - Cao, Xin
AU - Yang, Jingzhong
AU - Fandrich, Tom
AU - Zhang, Yiteng
AU - Rugeramigabo, Eddy P.
AU - Brechtken, Benedikt
AU - Haug, Rolf J.
AU - Zopf, Michael
AU - Ding, Fei
N1 - Funding Information: The authors gratefully acknowledge the German Federal Ministry of Education and Research (BMBF) within the projects QR.X (16KISQ015) and SemIQON (13N16291), the European Research Council (QD-NOMS - No. GA715770, MiNet – No. GA101043851), and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy (EXC-2123) Quantum Frontiers (390837967). Y.Z. acknowledges the China Scholarship Council (CSC201908370225). We thank Zhao An, Frederik Benthin and Pengji Li for fruitful discussions.
PY - 2023/7/12
Y1 - 2023/7/12
N2 - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
AB - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
KW - diamond color centers
KW - entangled photon pairs
KW - GaAs semiconductor quantum dots
KW - liquid nitrogen temperature
KW - single photons
KW - SiV zero phonon line
UR - http://www.scopus.com/inward/record.url?scp=85164286066&partnerID=8YFLogxK
U2 - 10.48550/arXiv.2304.14170
DO - 10.48550/arXiv.2304.14170
M3 - Article
C2 - 37378494
AN - SCOPUS:85164286066
VL - 23
SP - 6109
EP - 6115
JO - Nano letters
JF - Nano letters
SN - 1530-6984
IS - 13
ER -