A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

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Original languageEnglish
Pages (from-to)6109-6115
Number of pages7
JournalNano letters
Volume23
Issue number13
Early online date28 Jun 2023
Publication statusPublished - 12 Jul 2023

Abstract

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

Keywords

    diamond color centers, entangled photon pairs, GaAs semiconductor quantum dots, liquid nitrogen temperature, single photons, SiV zero phonon line

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A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K. / Cao, Xin; Yang, Jingzhong; Fandrich, Tom et al.
In: Nano letters, Vol. 23, No. 13, 12.07.2023, p. 6109-6115.

Research output: Contribution to journalArticleResearchpeer review

Cao X, Yang J, Fandrich T, Zhang Y, Rugeramigabo EP, Brechtken B et al. A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K. Nano letters. 2023 Jul 12;23(13):6109-6115. Epub 2023 Jun 28. doi: 10.48550/arXiv.2304.14170, 10.1021/acs.nanolett.3c01570
Cao, Xin ; Yang, Jingzhong ; Fandrich, Tom et al. / A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K. In: Nano letters. 2023 ; Vol. 23, No. 13. pp. 6109-6115.
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title = "A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K",
abstract = "Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.",
keywords = "diamond color centers, entangled photon pairs, GaAs semiconductor quantum dots, liquid nitrogen temperature, single photons, SiV zero phonon line",
author = "Xin Cao and Jingzhong Yang and Tom Fandrich and Yiteng Zhang and Rugeramigabo, {Eddy P.} and Benedikt Brechtken and Haug, {Rolf J.} and Michael Zopf and Fei Ding",
note = "Funding Information: The authors gratefully acknowledge the German Federal Ministry of Education and Research (BMBF) within the projects QR.X (16KISQ015) and SemIQON (13N16291), the European Research Council (QD-NOMS - No. GA715770, MiNet – No. GA101043851), and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy (EXC-2123) Quantum Frontiers (390837967). Y.Z. acknowledges the China Scholarship Council (CSC201908370225). We thank Zhao An, Frederik Benthin and Pengji Li for fruitful discussions. ",
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AU - Cao, Xin

AU - Yang, Jingzhong

AU - Fandrich, Tom

AU - Zhang, Yiteng

AU - Rugeramigabo, Eddy P.

AU - Brechtken, Benedikt

AU - Haug, Rolf J.

AU - Zopf, Michael

AU - Ding, Fei

N1 - Funding Information: The authors gratefully acknowledge the German Federal Ministry of Education and Research (BMBF) within the projects QR.X (16KISQ015) and SemIQON (13N16291), the European Research Council (QD-NOMS - No. GA715770, MiNet – No. GA101043851), and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy (EXC-2123) Quantum Frontiers (390837967). Y.Z. acknowledges the China Scholarship Council (CSC201908370225). We thank Zhao An, Frederik Benthin and Pengji Li for fruitful discussions.

PY - 2023/7/12

Y1 - 2023/7/12

N2 - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

AB - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

KW - diamond color centers

KW - entangled photon pairs

KW - GaAs semiconductor quantum dots

KW - liquid nitrogen temperature

KW - single photons

KW - SiV zero phonon line

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ER -

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