Details
| Original language | English |
|---|---|
| Pages (from-to) | G60-G62 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 8 |
| Issue number | 2 |
| Early online date | 23 Dec 2004 |
| Publication status | Published - Jan 2005 |
Abstract
We demonstrate an approach for fabricating relaxed SiGe layers on Si substrate with low threading dislocation density using commercially available low-pressure chemical vapor deposition epitaxy systems. This approach involves a thin epitaxial buffer layer with a reversed Ge composition gradient, i.e., the Ge composition decreases from the Si substrate to the growing surface. On a 90 nm thick buffer, growth of SiGe layer with composition up to 32% Ge was demonstrated with a strain relaxation >80% and a threading dislocation density below 10 6 cm -2.
ASJC Scopus subject areas
- Chemical Engineering(all)
- General Chemical Engineering
- Materials Science(all)
- General Materials Science
- Chemistry(all)
- Physical and Theoretical Chemistry
- Chemistry(all)
- Electrochemistry
- Engineering(all)
- Electrical and Electronic Engineering
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In: Electrochemical and Solid-State Letters, Vol. 8, No. 2, 01.2005, p. G60-G62.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A novel thin buffer concept for epitaxial growth of relaxed SiGe layers with low threading dislocation density
AU - Liu, J. P.
AU - Wong, L. H.
AU - Sohn, D. K.
AU - Hsia, L. C.
AU - Chan, L.
AU - Wong, C. C.
AU - Osten, H. J.
PY - 2005/1
Y1 - 2005/1
N2 - We demonstrate an approach for fabricating relaxed SiGe layers on Si substrate with low threading dislocation density using commercially available low-pressure chemical vapor deposition epitaxy systems. This approach involves a thin epitaxial buffer layer with a reversed Ge composition gradient, i.e., the Ge composition decreases from the Si substrate to the growing surface. On a 90 nm thick buffer, growth of SiGe layer with composition up to 32% Ge was demonstrated with a strain relaxation >80% and a threading dislocation density below 10 6 cm -2.
AB - We demonstrate an approach for fabricating relaxed SiGe layers on Si substrate with low threading dislocation density using commercially available low-pressure chemical vapor deposition epitaxy systems. This approach involves a thin epitaxial buffer layer with a reversed Ge composition gradient, i.e., the Ge composition decreases from the Si substrate to the growing surface. On a 90 nm thick buffer, growth of SiGe layer with composition up to 32% Ge was demonstrated with a strain relaxation >80% and a threading dislocation density below 10 6 cm -2.
UR - http://www.scopus.com/inward/record.url?scp=13444259443&partnerID=8YFLogxK
U2 - 10.1149/1.1848295
DO - 10.1149/1.1848295
M3 - Article
AN - SCOPUS:13444259443
VL - 8
SP - G60-G62
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 2
ER -