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Publications
2006
- Published
0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes
Gottlob, H. D. B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H. J. & Kurz, H., 25 Sept 2006, In: IEEE electron device letters. 27, 10, p. 814-816 3 p.Research output: Contribution to journal › Article › Research › peer review
1999
- External
Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's
Anteney, I. M., Lippert, G., Ashburn, P., Osten, H. J., Heinemann, B., Parker, G. J. & Knoll, D., Mar 1999, In: IEEE electron device letters. 20, 3, p. 116-118 3 p.Research output: Contribution to journal › Article › Research › peer review