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IEEE Electron Device Letters

1 - 2 out of 2Page size: 20

Publications

  1. 2006

  2. Published

    0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes 

    Gottlob, H. D. B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H. J. & Kurz, H., 25 Sept 2006, In: IEEE electron device letters. 27, 10, p. 814-816 3 p.

    Research output: Contribution to journalArticleResearchpeer review

  3. 1999

  4. External

    Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's

    Anteney, I. M., Lippert, G., Ashburn, P., Osten, H. J., Heinemann, B., Parker, G. J. & Knoll, D., Mar 1999, In: IEEE electron device letters. 20, 3, p. 116-118 3 p.

    Research output: Contribution to journalArticleResearchpeer review