Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Byungsul Min
  • Philipp Noack
  • Bianca Wattenberg
  • Torsten Dippell
  • Henning Schulte-Huxel
  • Robby Peibst
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Singulus Technologies AG
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Details

OriginalspracheEnglisch
Seiten (von - bis)233-239
Seitenumfang7
FachzeitschriftIEEE Journal of Photovoltaics
Jahrgang14
Ausgabenummer2
Frühes Online-Datum22 Jan. 2024
PublikationsstatusVeröffentlicht - März 2024

Abstract

This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.

ASJC Scopus Sachgebiete

Ziele für nachhaltige Entwicklung

Zitieren

Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System. / Min, Byungsul; Noack, Philipp; Wattenberg, Bianca et al.
in: IEEE Journal of Photovoltaics, Jahrgang 14, Nr. 2, 03.2024, S. 233-239.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Min, B., Noack, P., Wattenberg, B., Dippell, T., Schulte-Huxel, H., Peibst, R., & Brendel, R. (2024). Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System. IEEE Journal of Photovoltaics, 14(2), 233-239. Vorabveröffentlichung online. https://doi.org/10.1109/JPHOTOV.2024.3352836
Min B, Noack P, Wattenberg B, Dippell T, Schulte-Huxel H, Peibst R et al. Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System. IEEE Journal of Photovoltaics. 2024 Mär;14(2):233-239. Epub 2024 Jan 22. doi: 10.1109/JPHOTOV.2024.3352836
Min, Byungsul ; Noack, Philipp ; Wattenberg, Bianca et al. / Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System. in: IEEE Journal of Photovoltaics. 2024 ; Jahrgang 14, Nr. 2. S. 233-239.
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AU - Min, Byungsul

AU - Noack, Philipp

AU - Wattenberg, Bianca

AU - Dippell, Torsten

AU - Schulte-Huxel, Henning

AU - Peibst, Robby

AU - Brendel, Rolf

N1 - Funding Information: This work was supported by the State of Lower Saxony and the German Federal Ministry for Economic Affairs and Climate Action (BMWK) underGrant 03EE1012A (NanoPERC).

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N2 - This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.

AB - This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.

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KW - passivating contact

KW - Passivation

KW - Photovoltaic cells

KW - Production

KW - Silicon

KW - Temperature measurement

KW - wet-chemical

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