Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 035029 |
| Fachzeitschrift | 2D Materials |
| Jahrgang | 8 |
| Ausgabenummer | 3 |
| Frühes Online-Datum | 3 Mai 2021 |
| Publikationsstatus | Veröffentlicht - Juli 2021 |
Abstract
Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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in: 2D Materials, Jahrgang 8, Nr. 3, 035029, 07.2021.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Thickness-dependent gap energies in thin layers of Hf Te5
AU - Belke, C.
AU - Locmelis, S.
AU - Thole, L.
AU - Schmidt, H.
AU - Behrens, P.
AU - Haug, R. J.
PY - 2021/7
Y1 - 2021/7
N2 - Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
AB - Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
KW - Eletrical transport
KW - Gap energies
KW - Thin layers
KW - Transition metal chalcogenide
UR - http://www.scopus.com/inward/record.url?scp=85105546507&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/abf98b
DO - 10.1088/2053-1583/abf98b
M3 - Article
AN - SCOPUS:85105546507
VL - 8
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035029
ER -