Strong localization in weakly disordered epitaxial graphene

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Diana Slawig
  • Markus Gruschwitz
  • Christoph Tegenkamp

Organisationseinheiten

Externe Organisationen

  • Technische Universität Chemnitz
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Details

OriginalspracheEnglisch
Aufsatznummer121801
FachzeitschriftSurface Science
Jahrgang707
Frühes Online-Datum27 Jan. 2021
PublikationsstatusVeröffentlicht - Mai 2021

Abstract

We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (nH≈1012 cm−2) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L0∝1/nH. Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a”bad metal” due to adsorption of hydrogen.

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Strong localization in weakly disordered epitaxial graphene. / Slawig, Diana; Gruschwitz, Markus; Tegenkamp, Christoph.
in: Surface Science, Jahrgang 707, 121801, 05.2021.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Slawig D, Gruschwitz M, Tegenkamp C. Strong localization in weakly disordered epitaxial graphene. Surface Science. 2021 Mai;707:121801. Epub 2021 Jan 27. doi: 10.1016/j.susc.2021.121801
Slawig, Diana ; Gruschwitz, Markus ; Tegenkamp, Christoph. / Strong localization in weakly disordered epitaxial graphene. in: Surface Science. 2021 ; Jahrgang 707.
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abstract = "We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (nH≈1012 cm−2) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L0∝1/nH. Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a”bad metal” due to adsorption of hydrogen.",
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AU - Tegenkamp, Christoph

N1 - Funding Information: We gratefully acknowledge the financial support from the VW Foundation (VWZN3161) and the Hannover School for Nanotechnology hsn. We thank also Dr. Davood Momeni Pakdehi and Dr. Klaus Pierz (PTB Braunschweig) to provide us high quality samples.

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KW - Atomic hydrogen adsorption

KW - Graphene

KW - Ioffe-Regel criterion

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