Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 127-129 |
| Seitenumfang | 3 |
| Fachzeitschrift | Japanese Journal of Applied Physics |
| Jahrgang | 31 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - Feb. 1992 |
| Extern publiziert | Ja |
Abstract
The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
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- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Japanese Journal of Applied Physics, Jahrgang 31, Nr. 2, 02.1992, S. 127-129.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - One-dimensional conduction on the cleaved edge of inasquantum wells
AU - Haug, R. J.
AU - Munekata, H.
AU - Chang, L. L.
PY - 1992/2
Y1 - 1992/2
N2 - The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
AB - The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.
KW - Electronic conductance
KW - Lll-V compound semiconductors
KW - Low dimensional structures
KW - Molecular beam epitaxy
KW - Quantum transport
KW - Semiconductor heterostructures
UR - http://www.scopus.com/inward/record.url?scp=0026821235&partnerID=8YFLogxK
U2 - 10.1143/JJAP.31.L127
DO - 10.1143/JJAP.31.L127
M3 - Article
AN - SCOPUS:0026821235
VL - 31
SP - 127
EP - 129
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 2
ER -