Loading [MathJax]/extensions/tex2jax.js

MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • S. Manna
  • R. Aluguri
  • A. Katiyar
  • S. Das
  • H. J. Osten

Organisationseinheiten

Externe Organisationen

  • Indian Institute of Technology Kharagpur (IITKGP)
  • Hitachi Cambridge Laboratory
  • Indian Institute of Technology Bombay (IITB)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 7
  • Captures
    • Readers: 18
see details

Details

OriginalspracheEnglisch
Aufsatznummer505709
FachzeitschriftNANOTECHNOLOGY
Jahrgang24
Ausgabenummer50
PublikationsstatusVeröffentlicht - 20 Dez. 2013

Abstract

Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.

ASJC Scopus Sachgebiete

Zitieren

MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device. / Manna, S.; Aluguri, R.; Katiyar, A. et al.
in: NANOTECHNOLOGY, Jahrgang 24, Nr. 50, 505709, 20.12.2013.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Manna S, Aluguri R, Katiyar A, Das S, Laha A, Osten HJ et al. MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device. NANOTECHNOLOGY. 2013 Dez 20;24(50):505709. doi: 10.1088/0957-4484/24/50/505709
Download
@article{af4946383ae84861937591da4419f660,
title = "MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device",
abstract = "Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.",
author = "S. Manna and R. Aluguri and A. Katiyar and S. Das and A. Laha and Osten, {H. J.} and Ray, {S. K.}",
note = "Acknowledgments: The authors are grateful to Dr P V Satyam, R R Juluri, and A Ghosh of IOP Bhubaneswar, India, for providing the facility for the TEM measurements. The authors acknowledge the DST {\textquoteleft}FIST{\textquoteright} program for XPS facilities in the Department of Physics and Meteorology in IIT Kharagpur. The partial support from the DST-funded {\textquoteleft}MBE{\textquoteright} project is greatly acknowledged. ",
year = "2013",
month = dec,
day = "20",
doi = "10.1088/0957-4484/24/50/505709",
language = "English",
volume = "24",
journal = "NANOTECHNOLOGY",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "50",

}

Download

TY - JOUR

T1 - MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

AU - Manna, S.

AU - Aluguri, R.

AU - Katiyar, A.

AU - Das, S.

AU - Laha, A.

AU - Osten, H. J.

AU - Ray, S. K.

N1 - Acknowledgments: The authors are grateful to Dr P V Satyam, R R Juluri, and A Ghosh of IOP Bhubaneswar, India, for providing the facility for the TEM measurements. The authors acknowledge the DST ‘FIST’ program for XPS facilities in the Department of Physics and Meteorology in IIT Kharagpur. The partial support from the DST-funded ‘MBE’ project is greatly acknowledged.

PY - 2013/12/20

Y1 - 2013/12/20

N2 - Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.

AB - Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1-xGex quantum dots show better memory characteristics than single-layer Si quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=84889643795&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/24/50/505709

DO - 10.1088/0957-4484/24/50/505709

M3 - Article

AN - SCOPUS:84889643795

VL - 24

JO - NANOTECHNOLOGY

JF - NANOTECHNOLOGY

SN - 0957-4484

IS - 50

M1 - 505709

ER -