Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1829 |
| Seiten (von - bis) | 1829 |
| Fachzeitschrift | Electronics |
| Jahrgang | 10 |
| Ausgabenummer | 15 |
| Publikationsstatus | Veröffentlicht - 30 Juli 2021 |
Abstract
GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro-to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Signalverarbeitung
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Informatik (insg.)
- Hardware und Architektur
- Informatik (insg.)
- Computernetzwerke und -kommunikation
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in: Electronics, Jahrgang 10, Nr. 15, 1829, 30.07.2021, S. 1829.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Individually Switchable InGaN/GaN Nano-LED Arrays as Highly Resolved Illumination Engines
AU - Kluczyk-Korch, Katarzyna
AU - Moreno, Sergio
AU - Canals, Joan
AU - Diéguez, Angel
AU - Gülink, Jan
AU - Hartmann, Jana
AU - Waag, Andreas
AU - Di carlo, Aldo
AU - Auf der maur, Matthias
N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/7/30
Y1 - 2021/7/30
N2 - GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro-to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.
AB - GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro-to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.
KW - GaN LEDs
KW - Nano-LED arrays
KW - Spatially resolved illumination
KW - Structured illumination
UR - http://www.scopus.com/inward/record.url?scp=85111451767&partnerID=8YFLogxK
U2 - 10.3390/electronics10151829
DO - 10.3390/electronics10151829
M3 - Article
VL - 10
SP - 1829
JO - Electronics
JF - Electronics
SN - 2079-9292
IS - 15
M1 - 1829
ER -