Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 1910-1912 |
Seitenumfang | 3 |
Fachzeitschrift | IEEE Transactions on Electron Devices |
Jahrgang | 46 |
Ausgabenummer | 9 |
Publikationsstatus | Veröffentlicht - Sept. 1999 |
Extern publiziert | Ja |
Abstract
The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Transactions on Electron Devices, Jahrgang 46, Nr. 9, 09.1999, S. 1910-1912.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Increasing process margin in SiGe heterojunction bipolar technology by adding carbon
AU - Osten, H. J.
AU - Knoll, D.
AU - Heinemann, B.
AU - Schley, P.
PY - 1999/9
Y1 - 1999/9
N2 - The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.
AB - The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.
KW - Heterojunction bipolar transistor
KW - High frequency devices
KW - Si/SiGe:C heterojunction
UR - http://www.scopus.com/inward/record.url?scp=0032595351&partnerID=8YFLogxK
U2 - 10.1109/16.784193
DO - 10.1109/16.784193
M3 - Article
AN - SCOPUS:0032595351
VL - 46
SP - 1910
EP - 1912
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 9
ER -