Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • H. J. Osten
  • D. Knoll
  • B. Heinemann
  • P. Schley

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1910-1912
Seitenumfang3
FachzeitschriftIEEE Transactions on Electron Devices
Jahrgang46
Ausgabenummer9
PublikationsstatusVeröffentlicht - Sept. 1999
Extern publiziertJa

Abstract

The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.

ASJC Scopus Sachgebiete

Zitieren

Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. / Osten, H. J.; Knoll, D.; Heinemann, B. et al.
in: IEEE Transactions on Electron Devices, Jahrgang 46, Nr. 9, 09.1999, S. 1910-1912.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Osten HJ, Knoll D, Heinemann B, Schley P. Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. IEEE Transactions on Electron Devices. 1999 Sep;46(9):1910-1912. doi: 10.1109/16.784193
Osten, H. J. ; Knoll, D. ; Heinemann, B. et al. / Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. in: IEEE Transactions on Electron Devices. 1999 ; Jahrgang 46, Nr. 9. S. 1910-1912.
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