Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 115302 |
| Fachzeitschrift | Journal of Physics D: Applied Physics |
| Jahrgang | 55 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 15 Dez. 2021 |
Abstract
The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 °C) molecular beam epitaxy on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 °C) and high (500 °C) temperatures, does not degrade the crystal quality any further. By promoting adatom down-climb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Akustik und Ultraschall
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Journal of Physics D: Applied Physics, Jahrgang 55, Nr. 11, 115302, 15.12.2021.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth
AU - Nanwani, Alisha
AU - Pokharia, Ravindra Singh
AU - Schmidt, Jan
AU - Osten, H. J.
AU - Mahapatra, Suddhasatta
PY - 2021/12/15
Y1 - 2021/12/15
N2 - The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 °C) molecular beam epitaxy on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 °C) and high (500 °C) temperatures, does not degrade the crystal quality any further. By promoting adatom down-climb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.
AB - The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 °C) molecular beam epitaxy on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 °C) and high (500 °C) temperatures, does not degrade the crystal quality any further. By promoting adatom down-climb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.
KW - epitaxy
KW - gadolinium oxide
KW - germanium
KW - photonics
UR - http://www.scopus.com/inward/record.url?scp=85122639739&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ac3f0d
DO - 10.1088/1361-6463/ac3f0d
M3 - Article
AN - SCOPUS:85122639739
VL - 55
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 11
M1 - 115302
ER -