Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1051-1053 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 47 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1985 |
| Extern publiziert | Ja |
Abstract
Ballistic phonons were generated at low temperatures in nearly single-crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small-area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050°C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three-dimensional tomography based on ballistic phonons has been demonstrated.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Applied physics letters, Jahrgang 47, Nr. 10, 01.12.1985, S. 1051-1053.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Imaging of oxide precipitates in silicon with ballistic phonons
AU - Metzger, W.
AU - Huebener, R. P.
AU - Haug, R. J.
AU - Habermeier, H. U.
PY - 1985/12/1
Y1 - 1985/12/1
N2 - Ballistic phonons were generated at low temperatures in nearly single-crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small-area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050°C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three-dimensional tomography based on ballistic phonons has been demonstrated.
AB - Ballistic phonons were generated at low temperatures in nearly single-crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small-area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050°C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three-dimensional tomography based on ballistic phonons has been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=36549097174&partnerID=8YFLogxK
U2 - 10.1063/1.96375
DO - 10.1063/1.96375
M3 - Article
AN - SCOPUS:36549097174
VL - 47
SP - 1051
EP - 1053
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 10
ER -