Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Pablo Tieben
  • Andreas W. Schell
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Details

OriginalspracheEnglisch
Aufsatznummer2302700
FachzeitschriftAdvanced optical materials
Jahrgang12
Ausgabenummer20
PublikationsstatusVeröffentlicht - 16 Juli 2024

Abstract

Single photon emitters in hexagonal boron nitride (hBN) have gathered a lot of attention due to their favorable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these emitters has remained unknown thus far. Recently, several studies have tied the emission in the yellow spectral region to carbon-related defects, but the exact atomic structure of the defects remains elusive. In this study, photoluminescence emission and excitation spectroscopy is performed on a large number of emitters within this region. By comparing the experimental data with theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitride is determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.

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Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation. / Tieben, Pablo; Schell, Andreas W.
in: Advanced optical materials, Jahrgang 12, Nr. 20, 2302700, 16.07.2024.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Tieben P, Schell AW. Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation. Advanced optical materials. 2024 Jul 16;12(20):2302700. doi: 10.48550/arXiv.2308.09018, 10.1002/adom.202302700
Tieben, Pablo ; Schell, Andreas W. / Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation. in: Advanced optical materials. 2024 ; Jahrgang 12, Nr. 20.
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