Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 13-19 |
| Seitenumfang | 7 |
| Fachzeitschrift | CARBON |
| Jahrgang | 179 |
| Publikationsstatus | Veröffentlicht - Juli 2021 |
| Extern publiziert | Ja |
Abstract
Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted at T c and at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with (8.83 ± 0.10) × 10 −4 Ω cm to Ta/Pt/Au with (8.07 ± 0.62) × 10 −6 Ω cm.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
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in: CARBON, Jahrgang 179, 07.2021, S. 13-19.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K
AU - Manifold, Scott
AU - Klemencic, Georgina
AU - Thomas, Evan L.H.
AU - Mandal, Soumen
AU - Bland, Henry Alexander
AU - Giblin, Sean R.
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2021
PY - 2021/7
Y1 - 2021/7
N2 - Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted at T c and at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with (8.83 ± 0.10) × 10 −4 Ω cm to Ta/Pt/Au with (8.07 ± 0.62) × 10 −6 Ω cm.
AB - Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted at T c and at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with (8.83 ± 0.10) × 10 −4 Ω cm to Ta/Pt/Au with (8.07 ± 0.62) × 10 −6 Ω cm.
KW - Contact resistance
KW - Diamond: boron doped
KW - Metal contacts
KW - Superconductivity
UR - http://www.scopus.com/inward/record.url?scp=85103925576&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2021.02.079
DO - 10.1016/j.carbon.2021.02.079
M3 - Article
VL - 179
SP - 13
EP - 19
JO - CARBON
JF - CARBON
SN - 0008-6223
ER -