Details
| Originalsprache | Englisch |
|---|---|
| Seiten | 19 |
| Seitenumfang | 1 |
| Publikationsstatus | Veröffentlicht - 2000 |
| Veranstaltung | 12 Asia-Pacific Microwave Conference - Sydney, Australia Dauer: 3 Dez. 2000 → 6 Dez. 2000 |
Konferenz
| Konferenz | 12 Asia-Pacific Microwave Conference |
|---|---|
| Ort | Sydney, Australia |
| Zeitraum | 3 Dez. 2000 → 6 Dez. 2000 |
Abstract
The incorporation of low concentrations of carbon (<10 20 cm -3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the art SiGe:C HBTs C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
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2000. 19 Beitrag in 12 Asia-Pacific Microwave Conference, Sydney, Australia.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process
AU - Osten, H. J.
AU - Knoll, D.
AU - Heinemann, B.
AU - Rucker, H.
AU - Ehwald, K. E.
PY - 2000
Y1 - 2000
N2 - The incorporation of low concentrations of carbon (<10 20 cm -3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the art SiGe:C HBTs C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
AB - The incorporation of low concentrations of carbon (<10 20 cm -3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the art SiGe:C HBTs C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
UR - http://www.scopus.com/inward/record.url?scp=0034462058&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0034462058
SP - 19
T2 - 12 Asia-Pacific Microwave Conference
Y2 - 3 December 2000 through 6 December 2000
ER -