Details
| Original language | English |
|---|---|
| Pages (from-to) | 123-133 |
| Number of pages | 11 |
| Journal | COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering |
| Volume | 22 |
| Issue number | 1 |
| Publication status | Published - 1 Mar 2003 |
Abstract
The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.
Keywords
- Crystal growth, Electromagnetic fields, Mathematical modelling, Silicon
ASJC Scopus subject areas
- Computer Science(all)
- Computer Science Applications
- Computer Science(all)
- Computational Theory and Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
- Mathematics(all)
- Applied Mathematics
Sustainable Development Goals
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In: COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Vol. 22, No. 1, 01.03.2003, p. 123-133.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Using of EM fields during industrial CZ and FZ large silicon crystal growth
AU - Mühlbauer, Alfred
AU - Muiznieks, Andris
AU - Ratnieks, Gundars
AU - Krauze, Armands
AU - Raming, Georg
AU - Wetzel, Thomas
N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/3/1
Y1 - 2003/3/1
N2 - The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.
AB - The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.
KW - Crystal growth
KW - Electromagnetic fields
KW - Mathematical modelling
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0041704529&partnerID=8YFLogxK
U2 - 10.1108/03321640310452222
DO - 10.1108/03321640310452222
M3 - Article
AN - SCOPUS:0041704529
VL - 22
SP - 123
EP - 133
JO - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
JF - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
SN - 0332-1649
IS - 1
ER -