Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers: a first-principles study

Research output: Contribution to journalArticleResearchpeer review

Authors

  • B. Mortazavi
  • F. Shojaei
  • X. Zhuang

External Research Organisations

  • Persian Gulf University
  • Tongji University
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Details

Original languageEnglish
Article number100125
JournalMaterials Today Nano
Volume15
Early online date24 May 2021
Publication statusPublished - Aug 2021

Abstract

Beryllium polynitrides, (BeN4) is a novel layered material, which has been most recently fabricated under high pressure (Phys. Rev. Lett. 126 (2021), 175501). As a new class of two-dimensional (2D) materials, in this work, we conduct first-principles calculations to examine the stability and explore the electronic nature of MN4 (M = Be, Mg, Ir, Rh, Ni, Cu, Au, Pd, and Pt) monolayers. Acquired results confirm the dynamical and thermal stability of BeN4, MgN4, IrN4, PtN4, and RhN4 monolayers. Interestingly, BeN4 and MgN4 monolayers are found to show anisotropic Dirac cones in their electronic structure. Although PtN4 monolayer is predicted to be a narrow bandgap semiconductor, IrN4 and RhN4 monolayers are found to be metallic systems. We also elaborately explore the effects of the number of atomic layers on the electronic features of BeN4 nanosheets, which reveal highly appealing physics. Our results highlight that BeN4 nanosheet yield ultrahigh elastic modulus and mechanical strength, outperforming all other carbon-free 2D materials. Notably, RhN4 nanosheet is predicted to yield high capacities of 562, 450, and 900 mAh/g for Li, Na, and Ca ions storages, respectively. This study provides a comprehensive understanding of the intrinsic properties of MN4 nanosheets and highlights their outstanding physics.

Keywords

    2D materials, BeN, Dirac cone, Mechanical, Metal polynitrides

ASJC Scopus subject areas

Cite this

Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers: a first-principles study. / Mortazavi, B.; Shojaei, F.; Zhuang, X.
In: Materials Today Nano, Vol. 15, 100125, 08.2021.

Research output: Contribution to journalArticleResearchpeer review

Mortazavi B, Shojaei F, Zhuang X. Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers: a first-principles study. Materials Today Nano. 2021 Aug;15:100125. Epub 2021 May 24. doi: 10.48550/arXiv.2105.09733, 10.1016/j.mtnano.2021.100125
Mortazavi, B. ; Shojaei, F. ; Zhuang, X. / Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers : a first-principles study. In: Materials Today Nano. 2021 ; Vol. 15.
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abstract = "Beryllium polynitrides, (BeN4) is a novel layered material, which has been most recently fabricated under high pressure (Phys. Rev. Lett. 126 (2021), 175501). As a new class of two-dimensional (2D) materials, in this work, we conduct first-principles calculations to examine the stability and explore the electronic nature of MN4 (M = Be, Mg, Ir, Rh, Ni, Cu, Au, Pd, and Pt) monolayers. Acquired results confirm the dynamical and thermal stability of BeN4, MgN4, IrN4, PtN4, and RhN4 monolayers. Interestingly, BeN4 and MgN4 monolayers are found to show anisotropic Dirac cones in their electronic structure. Although PtN4 monolayer is predicted to be a narrow bandgap semiconductor, IrN4 and RhN4 monolayers are found to be metallic systems. We also elaborately explore the effects of the number of atomic layers on the electronic features of BeN4 nanosheets, which reveal highly appealing physics. Our results highlight that BeN4 nanosheet yield ultrahigh elastic modulus and mechanical strength, outperforming all other carbon-free 2D materials. Notably, RhN4 nanosheet is predicted to yield high capacities of 562, 450, and 900 mAh/g for Li, Na, and Ca ions storages, respectively. This study provides a comprehensive understanding of the intrinsic properties of MN4 nanosheets and highlights their outstanding physics.",
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T1 - Ultrahigh stiffness and anisotropic Dirac cones in BeN4 and MgN4 monolayers

T2 - a first-principles study

AU - Mortazavi, B.

AU - Shojaei, F.

AU - Zhuang, X.

N1 - Funding Information: B.M. and X.Z. appreciate the funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). F.S. thanks the Persian Gulf University Research Council, Iran, for support of this study. B.M is greatly thankful to the VEGAS cluster at Bauhaus University of Weimar for providing the computational resources.

PY - 2021/8

Y1 - 2021/8

N2 - Beryllium polynitrides, (BeN4) is a novel layered material, which has been most recently fabricated under high pressure (Phys. Rev. Lett. 126 (2021), 175501). As a new class of two-dimensional (2D) materials, in this work, we conduct first-principles calculations to examine the stability and explore the electronic nature of MN4 (M = Be, Mg, Ir, Rh, Ni, Cu, Au, Pd, and Pt) monolayers. Acquired results confirm the dynamical and thermal stability of BeN4, MgN4, IrN4, PtN4, and RhN4 monolayers. Interestingly, BeN4 and MgN4 monolayers are found to show anisotropic Dirac cones in their electronic structure. Although PtN4 monolayer is predicted to be a narrow bandgap semiconductor, IrN4 and RhN4 monolayers are found to be metallic systems. We also elaborately explore the effects of the number of atomic layers on the electronic features of BeN4 nanosheets, which reveal highly appealing physics. Our results highlight that BeN4 nanosheet yield ultrahigh elastic modulus and mechanical strength, outperforming all other carbon-free 2D materials. Notably, RhN4 nanosheet is predicted to yield high capacities of 562, 450, and 900 mAh/g for Li, Na, and Ca ions storages, respectively. This study provides a comprehensive understanding of the intrinsic properties of MN4 nanosheets and highlights their outstanding physics.

AB - Beryllium polynitrides, (BeN4) is a novel layered material, which has been most recently fabricated under high pressure (Phys. Rev. Lett. 126 (2021), 175501). As a new class of two-dimensional (2D) materials, in this work, we conduct first-principles calculations to examine the stability and explore the electronic nature of MN4 (M = Be, Mg, Ir, Rh, Ni, Cu, Au, Pd, and Pt) monolayers. Acquired results confirm the dynamical and thermal stability of BeN4, MgN4, IrN4, PtN4, and RhN4 monolayers. Interestingly, BeN4 and MgN4 monolayers are found to show anisotropic Dirac cones in their electronic structure. Although PtN4 monolayer is predicted to be a narrow bandgap semiconductor, IrN4 and RhN4 monolayers are found to be metallic systems. We also elaborately explore the effects of the number of atomic layers on the electronic features of BeN4 nanosheets, which reveal highly appealing physics. Our results highlight that BeN4 nanosheet yield ultrahigh elastic modulus and mechanical strength, outperforming all other carbon-free 2D materials. Notably, RhN4 nanosheet is predicted to yield high capacities of 562, 450, and 900 mAh/g for Li, Na, and Ca ions storages, respectively. This study provides a comprehensive understanding of the intrinsic properties of MN4 nanosheets and highlights their outstanding physics.

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