Details
| Original language | English |
|---|---|
| Title of host publication | Dielectrics for nanosystems 6 |
| Subtitle of host publication | materials science, processing, reliability, and manufacturing |
| Publisher | The Electrochemical Society |
| Pages | 3-9 |
| Number of pages | 7 |
| ISBN (print) | 978-1-60768-517-3, 978-1-62332-161-1 |
| Publication status | Published - 2014 |
| Event | 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States Duration: 11 May 2014 → 15 May 2014 |
Publication series
| Name | ECS Transactions |
|---|---|
| Publisher | Electrochemical Society, Inc. |
| Number | 2 |
| Volume | 61 |
| ISSN (Print) | 1938-5862 |
Abstract
The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Dielectrics for nanosystems 6: materials science, processing, reliability, and manufacturing. The Electrochemical Society, 2014. p. 3-9 (ECS Transactions; Vol. 61, No. 2).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Tuning dielectric properties of epitaxial lanthanide oxides on silicon
AU - Osten, H. J.
AU - Schwendt, D.
AU - Chaudhuri, A. R.
AU - Fissel, A.
AU - Shekhter, P.
AU - Eizenberg, M.
PY - 2014
Y1 - 2014
N2 - The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.
AB - The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.
UR - http://www.scopus.com/inward/record.url?scp=84925044012&partnerID=8YFLogxK
U2 - 10.1149/06102.0003ecst
DO - 10.1149/06102.0003ecst
M3 - Conference contribution
AN - SCOPUS:84925044012
SN - 978-1-60768-517-3
SN - 978-1-62332-161-1
T3 - ECS Transactions
SP - 3
EP - 9
BT - Dielectrics for nanosystems 6
PB - The Electrochemical Society
T2 - 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting
Y2 - 11 May 2014 through 15 May 2014
ER -