Details
| Original language | English |
|---|---|
| Pages (from-to) | 152-157 |
| Number of pages | 6 |
| Journal | THIN SOLID FILMS |
| Volume | 337 |
| Issue number | 1-2 |
| Publication status | Published - 11 Jan 1999 |
| Externally published | Yes |
Abstract
The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
Keywords
- Crystallization, Electron transport, Hillocks, Silicon-germanium films, X-ray diffraction
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 337, No. 1-2, 11.01.1999, p. 152-157.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Stability and transport properties of microcrystalline Si1-xGex films
AU - Edelman, F.
AU - Raz, T.
AU - Komem, Y.
AU - Stölzer, M.
AU - Werner, P.
AU - Zaumseil, P.
AU - Osten, H. J.
AU - Griesche, J.
AU - Capitan, M.
PY - 1999/1/11
Y1 - 1999/1/11
N2 - The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
AB - The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
KW - Crystallization
KW - Electron transport
KW - Hillocks
KW - Silicon-germanium films
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0000334181&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(98)01378-9
DO - 10.1016/S0040-6090(98)01378-9
M3 - Article
AN - SCOPUS:0000334181
VL - 337
SP - 152
EP - 157
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1-2
ER -