Details
| Original language | English |
|---|---|
| Title of host publication | 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 |
| Pages | 38-42 |
| Number of pages | 5 |
| Publication status | Published - 2010 |
| Event | 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 - St. Maarten Duration: 10 Feb 2010 → 16 Feb 2010 |
Publication series
| Name | 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 |
|---|
Abstract
We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.
Keywords
- Molecular beam epitaxy, Nonvolatile memory, Optoelectronics, Quantum confinement, Rare earth oxide, Si quantum dot
ASJC Scopus subject areas
- Computer Science(all)
- Artificial Intelligence
- Computer Science(all)
- Human-Computer Interaction
- Engineering(all)
- Electrical and Electronic Engineering
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4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. p. 38-42 5437795 (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices
AU - Osten, H. J.
AU - Laha, A.
AU - Fissel, A.
PY - 2010
Y1 - 2010
N2 - We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.
AB - We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.
KW - Molecular beam epitaxy
KW - Nonvolatile memory
KW - Optoelectronics
KW - Quantum confinement
KW - Rare earth oxide
KW - Si quantum dot
UR - http://www.scopus.com/inward/record.url?scp=77952329870&partnerID=8YFLogxK
U2 - 10.1109/ICQNM.2010.14
DO - 10.1109/ICQNM.2010.14
M3 - Conference contribution
AN - SCOPUS:77952329870
SN - 9780769539522
T3 - 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
SP - 38
EP - 42
BT - 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
T2 - 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
Y2 - 10 February 2010 through 16 February 2010
ER -