Details
| Original language | English |
|---|---|
| Pages (from-to) | 253-263 |
| Number of pages | 11 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 17 |
| Issue number | 4 |
| Publication status | Published - Jun 2009 |
| Externally published | Yes |
Abstract
We recently introduced the buried emitter back-junction solar cell, featuring large area fractions of overlap between n +-type and p +-type regions at the rear side of the device. In this paper we analyse the performance of the buried emitter solar cell (BESC) and its generalisations by one-dimensional device simulations and analytical model calculations. A key finding is that the generalised versions of the BESC structure allows achieving very high efficiencies by passivating virtually the entire surface of p-type emitters by an oxidised n-type surface layer. A disadvantage of this type of full-area emitter passivation in the generalised back-junction BESC is the need for an insulating layer between the metallisation of the emitter and the contact to the base, which is technologically difficult to achieve.
Keywords
- Energy conversion, Photodiodes, Photovoltaic cell doping, Photovoltaic cell fabrication, Photovoltaic cells, Silicon, Simulation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 17, No. 4, 06.2009, p. 253-263.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Numerical simulations of buried emitter back-junction solar cells
AU - Harder, Nils P.
AU - Mertens, Verena
AU - Brendel, Rolf
PY - 2009/6
Y1 - 2009/6
N2 - We recently introduced the buried emitter back-junction solar cell, featuring large area fractions of overlap between n +-type and p +-type regions at the rear side of the device. In this paper we analyse the performance of the buried emitter solar cell (BESC) and its generalisations by one-dimensional device simulations and analytical model calculations. A key finding is that the generalised versions of the BESC structure allows achieving very high efficiencies by passivating virtually the entire surface of p-type emitters by an oxidised n-type surface layer. A disadvantage of this type of full-area emitter passivation in the generalised back-junction BESC is the need for an insulating layer between the metallisation of the emitter and the contact to the base, which is technologically difficult to achieve.
AB - We recently introduced the buried emitter back-junction solar cell, featuring large area fractions of overlap between n +-type and p +-type regions at the rear side of the device. In this paper we analyse the performance of the buried emitter solar cell (BESC) and its generalisations by one-dimensional device simulations and analytical model calculations. A key finding is that the generalised versions of the BESC structure allows achieving very high efficiencies by passivating virtually the entire surface of p-type emitters by an oxidised n-type surface layer. A disadvantage of this type of full-area emitter passivation in the generalised back-junction BESC is the need for an insulating layer between the metallisation of the emitter and the contact to the base, which is technologically difficult to achieve.
KW - Energy conversion
KW - Photodiodes
KW - Photovoltaic cell doping
KW - Photovoltaic cell fabrication
KW - Photovoltaic cells
KW - Silicon
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=66149137231&partnerID=8YFLogxK
U2 - 10.1002/pip.887
DO - 10.1002/pip.887
M3 - Article
AN - SCOPUS:66149137231
VL - 17
SP - 253
EP - 263
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 4
ER -